TY - GEN
T1 - Patterning Platinum by Selective Wet Etching of Sacrificial Pt-A1 Alloy
AU - Meier, S.
AU - Rinck, H.
AU - Lange, B.
AU - Muellner, E.
AU - Brederlow, R.
AU - Enzelberger-Heim, M.
AU - Summerfelt, S.
AU - Kreupl, F.
AU - Wolf, B.
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/4
Y1 - 2020/4
N2 - Regardless of its functionality, there is no IC-compatible process to pattern platinum. This can be attributed to the inertness of the noble metal. Pt survives extreme conditions, and is used in electrochemical, temperature, and gas sensors. In this paper, we introduce a process enabling Pt structures of 1 μm thickness and submicron feature size on 200mm wafers. It is the industry's first with focus on high process control while eliminating contamination issues. This is achieved by locally alloying the Pt with a sacrificial Al layer. The so-formed PtAl2 is then removed by a selective wet-etch, which leaves a uniform Pt structure. The process is VLSI compatible, and can be adapted to any semiconductor fab to have a platinum processing capability. Pt as a third metal besides Al and Cu is a significant enabler for IC sensor technology.
AB - Regardless of its functionality, there is no IC-compatible process to pattern platinum. This can be attributed to the inertness of the noble metal. Pt survives extreme conditions, and is used in electrochemical, temperature, and gas sensors. In this paper, we introduce a process enabling Pt structures of 1 μm thickness and submicron feature size on 200mm wafers. It is the industry's first with focus on high process control while eliminating contamination issues. This is achieved by locally alloying the Pt with a sacrificial Al layer. The so-formed PtAl2 is then removed by a selective wet-etch, which leaves a uniform Pt structure. The process is VLSI compatible, and can be adapted to any semiconductor fab to have a platinum processing capability. Pt as a third metal besides Al and Cu is a significant enabler for IC sensor technology.
UR - http://www.scopus.com/inward/record.url?scp=85091973268&partnerID=8YFLogxK
U2 - 10.1109/EDTM47692.2020.9117886
DO - 10.1109/EDTM47692.2020.9117886
M3 - Conference contribution
AN - SCOPUS:85091973268
T3 - 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
BT - 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
Y2 - 6 April 2020 through 21 April 2020
ER -