Organometallic chemical vapor deposition of group-III nitride thin films using single source precursors

Roland A. Fischer; Wolfram Rogge

doi:10.1557/proc-482-39

Organometallic chemical vapor deposition of group-III nitride thin films using single source precursors

Roland A. Fischer, Wolfram Rogge

Max-Planck-lnstitut für Kohlenforschung

Publikation: Beitrag in Fachzeitschrift › Konferenzartikel › Begutachtung

1 Zitat (Scopus)

Abstract

The OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N₃)₂Ga[(CH₂)₃NMe2] (1), (N₃)In[(CH₂)₃NMe₂]₂ (2) and (N₃)Al(CH₂)₃NMe₂]₂ (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200 °C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

Originalsprache	Englisch
Seiten (von - bis)	39-44
Seitenumfang	6
Fachzeitschrift	Materials Research Society Symposium - Proceedings
Jahrgang	482
DOIs	https://doi.org/10.1557/proc-482-39
Publikationsstatus	Veröffentlicht - 1997
Extern publiziert	Ja
Veranstaltung	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Dauer: 1 Dez. 1997 → 4 Dez. 1997

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@article{23ed5c68c4b042eca6303ed906614bf2,

title = "Organometallic chemical vapor deposition of group-III nitride thin films using single source precursors",

abstract = "The OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200 °C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.",

author = "Fischer, {Roland A.} and Wolfram Rogge",

year = "1997",

doi = "10.1557/proc-482-39",

language = "English",

volume = "482",

pages = "39--44",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Organometallic chemical vapor deposition of group-III nitride thin films using single source precursors

AU - Fischer, Roland A.

AU - Rogge, Wolfram

PY - 1997

Y1 - 1997

N2 - The OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200 °C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

AB - The OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200 °C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

UR - http://www.scopus.com/inward/record.url?scp=0031348634&partnerID=8YFLogxK

U2 - 10.1557/proc-482-39

DO - 10.1557/proc-482-39

M3 - Conference article

AN - SCOPUS:0031348634

SN - 0272-9172

VL - 482

SP - 39

EP - 44

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

Organometallic chemical vapor deposition of group-III nitride thin films using single source precursors

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