@inproceedings{9815873946ac411b86ced33c478ea5c2,
title = "Non-linear gate length dependence of on-current in Si-Nanowire FETs",
abstract = "An extensive gate-length (LG) dependent electrical characterization of silicon nanowire (NW) field effect transistors (FET) is presented here. Catalytically-grown and nominally undoped Si-NWs were integrated as the active region of FETs, upon which fully silicided Schottky source and drain contacts were fabricated. The length of the active region was shortened by a desired value, through the lateral self-aligned formation of nickel silicide source- and drain-segments. All Si-NW FETs consisting of a single Si-NW with diameters between 10 and 30 nm display p-type behaviour and on/off-current ratios of up to 107. Devices with LGs below 1 μm and 21 nm NW-diameters all show the same on currents around 1 μA at 1 V drain-source biases. For LG > 1 μm the on-current decreases exponentially with increasing LG.",
author = "Weber, {W. M.} and Graham, {A. P.} and Duesberg, {G. S.} and M. Liebau and C. Cheze and L. Geelhaar and E. Unger and W. Pamler and W. Hoenlein and H. Riechert and F. Kreupl and P. Lugli",
note = "Publisher Copyright: {\textcopyright}2006 IEEE.; ESSDERC 2006 - 36th European Solid-State Device Research Conference ; Conference date: 19-09-2006 Through 21-09-2006",
year = "2006",
doi = "10.1109/essder.2006.307728",
language = "English",
isbn = "1424403014",
series = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "423--426",
booktitle = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",
}