Noise parameter modeling of HEMTs with resistor temperature noise sources

T. Felgentreff, G. Olbrich, P. Russer

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

18 Zitate (Scopus)

Abstract

We present a new model to describe the millimeter wave noise performance of MESFETs and HEMTs. The model is used to extrapolate the noise parameters in frequency range and to describe the noise behaviour over a wide range of bias points. The model is based on three uncorrelated noise sources located at the intrinsic transistor, which are assumed to show white spectral behaviour. The parameters of the model are determined from noise parameter measurements. The noise parameter extraction technique is straightforward and based on circuit simulation programs. The model is applied to several pseudomorphic and conventional HEMT structures and results are compared with data obtained from other models.

OriginalspracheEnglisch
TitelIEEE MTT-S International Microwave Symposium Digest
Herausgeber (Verlag)Publ by IEEE
Seiten853-856
Seitenumfang4
ISBN (Print)0780317793
PublikationsstatusVeröffentlicht - 1994
VeranstaltungProceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA
Dauer: 23 Mai 199427 Mai 1994

Publikationsreihe

NameIEEE MTT-S International Microwave Symposium Digest
Band2
ISSN (Print)0149-645X

Konferenz

KonferenzProceedings of the IEEE MTT-S International Microwave Symposium
OrtSan Diego, CA, USA
Zeitraum23/05/9427/05/94

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