New cryoelectronic detector concept based on two-dimensional heat diffusion

S. Lemke; F. Hebrank; R. Gross; R. P. Huebener; Th Weimann; R. Pöpel; J. Niemeyer; U. Schnakenberg; W. Benecke

doi:10.1063/1.353061

New cryoelectronic detector concept based on two-dimensional heat diffusion

S. Lemke, F. Hebrank, R. Gross, R. P. Huebener, Th Weimann, R. Pöpel, J. Niemeyer, U. Schnakenberg, W. Benecke

Publikation: Beitrag in Fachzeitschrift › Kurzer Abriss › Begutachtung

4 Zitate (Scopus)

Abstract

Superconducting Nb/AlO_x/Nb tunnel junctions have been fabricated on Si membrane windows of only 1.2 μm thickness acting as substrates. The membrane windows with areas between (600 μm)² and (1200 μm)² remained undamaged after the different fabrications steps. The tunnel junctions positioned on the membranes and the bulk silicon substrate have very similar current-voltage characteristics. Using low-temperature scanning electron microscopy the two-dimensional heat diffusion process has been imaged in the detector geometry. This two-dimensional heat diffusion leads to a new cryoelectronic radiation detector concept combining high energy and spatial resolution with a large effective detector area. Applications of this detector concept include soft-x-ray spectroscopy and the nuclear β decay.

Originalsprache	Englisch
Seiten (von - bis)	2659-2666
Seitenumfang	8
Fachzeitschrift	Journal of Applied Physics
Jahrgang	73
Ausgabenummer	6
DOIs	https://doi.org/10.1063/1.353061
Publikationsstatus	Veröffentlicht - 1993
Extern publiziert	Ja

Zugriff auf Dokument

10.1063/1.353061

Andere Dateien und Links

Verknüpfung zur Publikation in Scopus

Dieses zitieren

@article{0bc42b4fb8f4406da1df5807bff4c3c6,

title = "New cryoelectronic detector concept based on two-dimensional heat diffusion",

abstract = "Superconducting Nb/AlOx/Nb tunnel junctions have been fabricated on Si membrane windows of only 1.2 μm thickness acting as substrates. The membrane windows with areas between (600 μm)2 and (1200 μm)2 remained undamaged after the different fabrications steps. The tunnel junctions positioned on the membranes and the bulk silicon substrate have very similar current-voltage characteristics. Using low-temperature scanning electron microscopy the two-dimensional heat diffusion process has been imaged in the detector geometry. This two-dimensional heat diffusion leads to a new cryoelectronic radiation detector concept combining high energy and spatial resolution with a large effective detector area. Applications of this detector concept include soft-x-ray spectroscopy and the nuclear β decay.",

author = "S. Lemke and F. Hebrank and R. Gross and Huebener, {R. P.} and Th Weimann and R. P{\"o}pel and J. Niemeyer and U. Schnakenberg and W. Benecke",

year = "1993",

doi = "10.1063/1.353061",

language = "English",

volume = "73",

pages = "2659--2666",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - New cryoelectronic detector concept based on two-dimensional heat diffusion

AU - Lemke, S.

AU - Hebrank, F.

AU - Gross, R.

AU - Huebener, R. P.

AU - Weimann, Th

AU - Pöpel, R.

AU - Niemeyer, J.

AU - Schnakenberg, U.

AU - Benecke, W.

PY - 1993

Y1 - 1993

N2 - Superconducting Nb/AlOx/Nb tunnel junctions have been fabricated on Si membrane windows of only 1.2 μm thickness acting as substrates. The membrane windows with areas between (600 μm)2 and (1200 μm)2 remained undamaged after the different fabrications steps. The tunnel junctions positioned on the membranes and the bulk silicon substrate have very similar current-voltage characteristics. Using low-temperature scanning electron microscopy the two-dimensional heat diffusion process has been imaged in the detector geometry. This two-dimensional heat diffusion leads to a new cryoelectronic radiation detector concept combining high energy and spatial resolution with a large effective detector area. Applications of this detector concept include soft-x-ray spectroscopy and the nuclear β decay.

AB - Superconducting Nb/AlOx/Nb tunnel junctions have been fabricated on Si membrane windows of only 1.2 μm thickness acting as substrates. The membrane windows with areas between (600 μm)2 and (1200 μm)2 remained undamaged after the different fabrications steps. The tunnel junctions positioned on the membranes and the bulk silicon substrate have very similar current-voltage characteristics. Using low-temperature scanning electron microscopy the two-dimensional heat diffusion process has been imaged in the detector geometry. This two-dimensional heat diffusion leads to a new cryoelectronic radiation detector concept combining high energy and spatial resolution with a large effective detector area. Applications of this detector concept include soft-x-ray spectroscopy and the nuclear β decay.

UR - http://www.scopus.com/inward/record.url?scp=36449008418&partnerID=8YFLogxK

U2 - 10.1063/1.353061

DO - 10.1063/1.353061

M3 - Short survey

AN - SCOPUS:36449008418

SN - 0021-8979

VL - 73

SP - 2659

EP - 2666

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

New cryoelectronic detector concept based on two-dimensional heat diffusion

Abstract

Zugriff auf Dokument

Andere Dateien und Links

Fingerprint

Dieses zitieren