Nanocrystalline gallium nitride from gallium azide precursors

A. H. Manz, A. C. Frank, H. Sussek, F. Stowasser, R. A. Fischer

Publikation: Beitrag in FachzeitschriftKonferenzartikelBegutachtung

2 Zitate (Scopus)

Abstract

High quality nanoscale, phase-pure hexagonal gallium nitride (GaN) crystallites have been synthesized using the thermally induced explosion of the molecular precursor (Et3N)Ga(N3)3. The method allows the control of the particle size from 2 to 24 nm. X-ray diffraction and Rietveld simulations revealed a platelet-like shape of the larger particles in contrast to the rather spherical smaller crystallites. An increasing blue-shift of the high energy luminescence with decreasing crystal size was found (up to 4.4 eV at 5 K). A preliminary analysis of the surface chemistry of has been carried out based on silylation and deuteration experiments and IR spectroscopy, indicating hydrophilic, O-H and N-H terminated particles.

OriginalspracheEnglisch
Seiten (von - bis)15-20
Seitenumfang6
FachzeitschriftMaterials Research Society Symposium - Proceedings
Jahrgang501
PublikationsstatusVeröffentlicht - 1998
Extern publiziertJa
VeranstaltungProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Dauer: 30 Nov. 19973 Dez. 1997

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