@inproceedings{66323399d90a4577a57ec469be112fad,
title = "Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing",
abstract = "This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications.",
keywords = "Enclosed Layout Transistor, hardness-by-design, in-memory computing, memristive devices, radiation-hard",
author = "Quesada, {Emilio Perez Bosch} and Tommaso Rizzi and Aditya Gupta and Mahadevaiah, {Mamathamba K.} and Andreas Schubert and Stefan Pechmann and Ruolan Jia and Max Uhlmann and Amelie Hagelauer and Christian Wenger and Eduardo Perez",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 14th Spanish Conference on Electron Devices, CDE 2023 ; Conference date: 06-06-2023 Through 08-06-2023",
year = "2023",
doi = "10.1109/CDE58627.2023.10339525",
language = "English",
series = "14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "E. Maset and C. Reig",
booktitle = "14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings",
}