Morphology and optical properties of InAs(N) quantum dots

O. Schumann, L. Geelhaar, H. Riechert, H. Cerva, G. Abstreiter

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

34 Zitate (Scopus)

Abstract

The optical properties and morphology of InAs(N) quantum dots (QD) were investigated. Solid source molecular beam epitaxy (MBER) was used to grow the QDs on GaAs(001) substrates, where a radiofrequency plasma source supplied the nitrogen. Photoluminescence (PL) spectroscopy, atomic force microscopy and transmission electron microscopy were used for characterization of the QDs. It was observed that large QDs were formed with increasing amount of nitrogen, and the small QDs grown in nitrogen free environment gradually disappeared. Misfit dislocations were found in the large QDs, which made them plastically relaxed.

OriginalspracheEnglisch
Seiten (von - bis)2832-2840
Seitenumfang9
FachzeitschriftJournal of Applied Physics
Jahrgang96
Ausgabenummer5
DOIs
PublikationsstatusVeröffentlicht - 1 Sept. 2004

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