Abstract
A new route in organometallic chemical vapour deposition (OMCVD) of GaN layers is the single-source precursor method. Molecular beam sampling using quadrupole mass spectrometry and resonance-enhanced multiphoton ionisation time-of-flight mass spectrometry (REMPI-TOF-MS) has been used to show that gallium atoms and gallium-nitrogen compounds, like HGaNx (x=2-6) and GaNx (x=2-6), appear in the boundary layer of a sapphire substrate during thermal decomposition of (N3)2Ga[CH2CH2CH2N(CH 3)2] in the temperature range 400-1000 K. The temperature dependence of the species is shown to be directly correlated with the growth rate of GaN layers.
Originalsprache | Englisch |
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Seiten (von - bis) | 152-156 |
Seitenumfang | 5 |
Fachzeitschrift | Chemical Physics Letters |
Jahrgang | 300 |
Ausgabenummer | 1-2 |
DOIs | |
Publikationsstatus | Veröffentlicht - 29 Jan. 1999 |
Extern publiziert | Ja |