Modelling of ion-induced charge generation in high voltage diodes

W. Kaindl; G. Sölkner; P. Voss; G. Wachutka

Modelling of ion-induced charge generation in high voltage diodes

W. Kaindl
, G. Sölkner
, P. Voss
, G. Wachutka

Computation, Information and Technology

Technische Universität München

Publikation: Konferenzbeitrag › Papier › Begutachtung

1 Zitat (Scopus)

Abstract

In this work we present a model which is able to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor power device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial evolutions of the electric field as well as the carrier densities in the interior of the device initiated by the ion-induced charge plasma. For sufficiently high biases strong charge multiplication suddenly sets on which conforms to recent experimental findings.

Originalsprache	Englisch
Seiten	223-226
Seitenumfang	4
Publikationsstatus	Veröffentlicht - 2001
Veranstaltung	13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan Dauer: 4 Juni 2001 → 7 Juni 2001

Konferenz

Konferenz	13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)
Land/Gebiet	Japan
Ort	Osaka
Zeitraum	4/06/01 → 7/06/01

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Dieser Output leistet einen Beitrag zu folgendem(n) Ziel(en) für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

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@conference{cdc19ae8359d48eba2ec2da808063578,

title = "Modelling of ion-induced charge generation in high voltage diodes",

abstract = "In this work we present a model which is able to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor power device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial evolutions of the electric field as well as the carrier densities in the interior of the device initiated by the ion-induced charge plasma. For sufficiently high biases strong charge multiplication suddenly sets on which conforms to recent experimental findings.",

author = "W. Kaindl and G. S{\"o}lkner and P. Voss and G. Wachutka",

year = "2001",

language = "English",

pages = "223--226",

note = "13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) ; Conference date: 04-06-2001 Through 07-06-2001",

}

TY - CONF

T1 - Modelling of ion-induced charge generation in high voltage diodes

AU - Kaindl, W.

AU - Sölkner, G.

AU - Voss, P.

AU - Wachutka, G.

PY - 2001

Y1 - 2001

N2 - In this work we present a model which is able to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor power device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial evolutions of the electric field as well as the carrier densities in the interior of the device initiated by the ion-induced charge plasma. For sufficiently high biases strong charge multiplication suddenly sets on which conforms to recent experimental findings.

AB - In this work we present a model which is able to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor power device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial evolutions of the electric field as well as the carrier densities in the interior of the device initiated by the ion-induced charge plasma. For sufficiently high biases strong charge multiplication suddenly sets on which conforms to recent experimental findings.

UR - https://www.scopus.com/pages/publications/0034830050

M3 - Paper

AN - SCOPUS:0034830050

SP - 223

EP - 226

T2 - 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)

Y2 - 4 June 2001 through 7 June 2001

ER -

Modelling of ion-induced charge generation in high voltage diodes

Abstract

Konferenz

UN SDGs

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