TY - GEN
T1 - Mixed-level modeling of squeeze film damping in MEMS
T2 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
AU - Niessner, M.
AU - Schrag, G.
AU - Iannacci, J.
AU - Wachutka, G.
PY - 2011
Y1 - 2011
N2 - We present the first results of a systematic study of squeeze film damping (SQFD) in MEMS, in which we compare the measured and simulated quality factors of a series of specifically designed devices at varying pressure. Three models are employed to calculate the quality factor: an analytical-heuristic compact model by Veijola, a numerical mixed-mode model by Veijola and a mixed-level model by the authors of this work. At normal pressure the mixed-level model produces, with a maximum error of only 7%, the most accurate results for the specimens considered demonstrating the predictive power of this rigorously physics-based modeling approach. The Veijola models produce maximum errors of up to 38% and 84%, respectively. Versus pressure, the highest errors occur in the transition regime between the continuum and the molecular gas regime.
AB - We present the first results of a systematic study of squeeze film damping (SQFD) in MEMS, in which we compare the measured and simulated quality factors of a series of specifically designed devices at varying pressure. Three models are employed to calculate the quality factor: an analytical-heuristic compact model by Veijola, a numerical mixed-mode model by Veijola and a mixed-level model by the authors of this work. At normal pressure the mixed-level model produces, with a maximum error of only 7%, the most accurate results for the specimens considered demonstrating the predictive power of this rigorously physics-based modeling approach. The Veijola models produce maximum errors of up to 38% and 84%, respectively. Versus pressure, the highest errors occur in the transition regime between the continuum and the molecular gas regime.
KW - Squeeze film damping
KW - experimental validation
KW - modeling
KW - rarefaction
UR - http://www.scopus.com/inward/record.url?scp=80052133100&partnerID=8YFLogxK
U2 - 10.1109/TRANSDUCERS.2011.5969575
DO - 10.1109/TRANSDUCERS.2011.5969575
M3 - Conference contribution
AN - SCOPUS:80052133100
SN - 9781457701573
T3 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
SP - 1693
EP - 1696
BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Y2 - 5 June 2011 through 9 June 2011
ER -