Microscopic interface asymmetry and spin-splitting of electron subbands in semiconductor quantum structures

U. Rössler, J. Kainz

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

65 Zitate (Scopus)

Abstract

The microscopic interface asymmetry of (001)-grown semiconductor heterostructures that gives rise to heavy-light hole coupling even at zero in-plane wave vector k, modifies also the subband dispersion of confined electrons. Starting from a multiband envelope formulation we apply matrix perturbation theory to derive explicit expressions caused by this interface asymmetry, which in the 2 × 2 conduction band Hamiltonian appear as a warping and a spin-splitting term. The warping term results in an inequivalence of the dispersion along [110] and [11̄0] as required by the microscopic C2v symmetry, while the spin-splitting term has the same structure as the corresponding term derived from the zinc-blende bulk inversion asymmetry. Implications with respect to spin-relaxation will be discussed.

OriginalspracheEnglisch
Seiten (von - bis)313-316
Seitenumfang4
FachzeitschriftSolid State Communications
Jahrgang121
Ausgabenummer6-7
DOIs
PublikationsstatusVeröffentlicht - 22 Feb. 2002
Extern publiziertJa

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