Metal impurities in a-Si:H and other amorphous semiconductors

Martin Stutzmann

doi:10.1016/0022-3093(89)90602-9

Metal impurities in a-Si:H and other amorphous semiconductors

Martin Stutzmann

Max Planck Institute for Solid State Research

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

1 Zitat (Scopus)

Abstract

The g = 1.933 (g = 1.925) spin-resonance signals observed in thin films of a-Si:H (a-Ge:H) are discussed. Mo⁵⁺-ions formed through the incorporation of MoO₂ or MoO₃ molecules in the semiconducting films are proposed as the microscopic origin of these resonances. Evidence for the electronic activity of these defect levels is presented.

Originalsprache	Englisch
Seiten (von - bis)	414-416
Seitenumfang	3
Fachzeitschrift	Journal of Non-Crystalline Solids
Jahrgang	114
Ausgabenummer	PART 2
DOIs	https://doi.org/10.1016/0022-3093(89)90602-9
Publikationsstatus	Veröffentlicht - 2 Dez. 1989
Extern publiziert	Ja

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10.1016/0022-3093(89)90602-9

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abstract = "The g = 1.933 (g = 1.925) spin-resonance signals observed in thin films of a-Si:H (a-Ge:H) are discussed. Mo5+-ions formed through the incorporation of MoO2 or MoO3 molecules in the semiconducting films are proposed as the microscopic origin of these resonances. Evidence for the electronic activity of these defect levels is presented.",

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AB - The g = 1.933 (g = 1.925) spin-resonance signals observed in thin films of a-Si:H (a-Ge:H) are discussed. Mo5+-ions formed through the incorporation of MoO2 or MoO3 molecules in the semiconducting films are proposed as the microscopic origin of these resonances. Evidence for the electronic activity of these defect levels is presented.

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Metal impurities in a-Si:H and other amorphous semiconductors

Abstract

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