MBE growth of ternary SnGeSiGe superlattices

W. Dondl; E. Silveira; G. Abstreiter

doi:10.1016/0022-0248(95)00331-2

MBE growth of ternary SnGeSiGe superlattices

W. Dondl, E. Silveira, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

5 Zitate (Scopus)

Abstract

Short period α-Sn/Ge/Si/Ge superlattices have been prepared on (001) Ge substrates by a low temperature molecular beam epitaxy (MBE) technique that allows large substrate temperature variations. LEED patterns show a good crystalline quality. Folded acoustic phonons of the superlattice structure are clearly visible in Raman spectroscopy. Their energetic positions are in good agreement with theoretical expectations.

Originalsprache	Englisch
Seiten (von - bis)	400-404
Seitenumfang	5
Fachzeitschrift	Journal of Crystal Growth
Jahrgang	157
Ausgabenummer	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00331-2
Publikationsstatus	Veröffentlicht - 2 Dez. 1995

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10.1016/0022-0248(95)00331-2

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@article{2afd05472e934219978f9ecaf5ff6d32,

title = "MBE growth of ternary SnGeSiGe superlattices",

abstract = "Short period α-Sn/Ge/Si/Ge superlattices have been prepared on (001) Ge substrates by a low temperature molecular beam epitaxy (MBE) technique that allows large substrate temperature variations. LEED patterns show a good crystalline quality. Folded acoustic phonons of the superlattice structure are clearly visible in Raman spectroscopy. Their energetic positions are in good agreement with theoretical expectations.",

author = "W. Dondl and E. Silveira and G. Abstreiter",

year = "1995",

month = dec,

day = "2",

doi = "10.1016/0022-0248(95)00331-2",

language = "English",

volume = "157",

pages = "400--404",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - MBE growth of ternary SnGeSiGe superlattices

AU - Dondl, W.

AU - Silveira, E.

AU - Abstreiter, G.

PY - 1995/12/2

Y1 - 1995/12/2

N2 - Short period α-Sn/Ge/Si/Ge superlattices have been prepared on (001) Ge substrates by a low temperature molecular beam epitaxy (MBE) technique that allows large substrate temperature variations. LEED patterns show a good crystalline quality. Folded acoustic phonons of the superlattice structure are clearly visible in Raman spectroscopy. Their energetic positions are in good agreement with theoretical expectations.

AB - Short period α-Sn/Ge/Si/Ge superlattices have been prepared on (001) Ge substrates by a low temperature molecular beam epitaxy (MBE) technique that allows large substrate temperature variations. LEED patterns show a good crystalline quality. Folded acoustic phonons of the superlattice structure are clearly visible in Raman spectroscopy. Their energetic positions are in good agreement with theoretical expectations.

UR - http://www.scopus.com/inward/record.url?scp=0029633730&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(95)00331-2

DO - 10.1016/0022-0248(95)00331-2

M3 - Article

AN - SCOPUS:0029633730

SN - 0022-0248

VL - 157

SP - 400

EP - 404

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

MBE growth of ternary SnGeSiGe superlattices

Abstract

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