Magnetization profile at the Fe/GaAs(0 0 1)-4 × 6 interface

L. Giovanelli, C. S. Tian, P. L. Gastelois, G. Panaccione, M. Fabrizioli, M. Hochstrasser, M. Galaktionov, C. H. Back, G. Rossi

Publikation: Beitrag in FachzeitschriftKonferenzartikelBegutachtung

11 Zitate (Scopus)

Abstract

The magnetization of a thin Fe film epitaxially grown on GaAs(001)-4 × 6 was studied at different depths from the metal/semiconductor interface using a single layer of Fe0.5Co0.5 as a marker layer through a double-wedge Fe film. By measuring the X-ray magnetic circular dichroism spectroscopy at the L2,3 of Co, the magnetic response of the film could be sensed at different distances from the interface. Data show a reduction of the magnetization at the interface though the existence of a magnetically "dead" layer is completely ruled out. Moreover, the magnetization was found to be reduced at the Fe film surface.

OriginalspracheEnglisch
Seiten (von - bis)177-180
Seitenumfang4
FachzeitschriftPhysica B: Condensed Matter
Jahrgang345
Ausgabenummer1-4
DOIs
PublikationsstatusVeröffentlicht - 1 März 2004
Extern publiziertJa
VeranstaltungProceedings of the Conference on Polarised Neutron - Venice, Italien
Dauer: 4 Aug. 20036 Aug. 2003

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