Local structure of Ge/Si nanostructures: Uniqueness of XAFS spectroscopy

A. V. Kolobov, H. Oyanagi, A. Frenkel, I. Robinson, J. Cross, S. Wei, K. Brunner, G. Abstreiter, Y. Maeda, A. Shklyaev, M. Ichikawa, S. Yamasaki, K. Tanaka

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

9 Zitate (Scopus)

Abstract

The local structure of Ge/Si nanostructures was discussed using x-ray absorption fine structure (XAFS) spectroscopy. The samples were found to be grown by molecular beam epitaxy (MBE) on Si substrate at three different temperatures of 510, 550 and 745 °C. The analysis showed that the combined diffraction anomalous fine structure (DAFS)-EXAFS analysis allowed to separate the structural parameters of the intermixed nanocrystalline and amorphous phases.

OriginalspracheEnglisch
Seiten (von - bis)174-178
Seitenumfang5
FachzeitschriftNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Jahrgang199
DOIs
PublikationsstatusVeröffentlicht - Jan. 2003

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