Local structure of Ge/Si nanostructures: Uniqueness of XAFS spectroscopy

A. V. Kolobov; H. Oyanagi; A. Frenkel; I. Robinson; J. Cross; S. Wei; K. Brunner; G. Abstreiter; Y. Maeda; A. Shklyaev; M. Ichikawa; S. Yamasaki; K. Tanaka

doi:10.1016/S0168-583X(02)01556-2

Local structure of Ge/Si nanostructures: Uniqueness of XAFS spectroscopy

A. V. Kolobov, H. Oyanagi, A. Frenkel, I. Robinson, J. Cross, S. Wei, K. Brunner, G. Abstreiter, Y. Maeda, A. Shklyaev, M. Ichikawa, S. Yamasaki, K. Tanaka

Natural Sciences

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

9 Zitate (Scopus)

Abstract

The local structure of Ge/Si nanostructures was discussed using x-ray absorption fine structure (XAFS) spectroscopy. The samples were found to be grown by molecular beam epitaxy (MBE) on Si substrate at three different temperatures of 510, 550 and 745 °C. The analysis showed that the combined diffraction anomalous fine structure (DAFS)-EXAFS analysis allowed to separate the structural parameters of the intermixed nanocrystalline and amorphous phases.

Originalsprache	Englisch
Seiten (von - bis)	174-178
Seitenumfang	5
Fachzeitschrift	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Jahrgang	199
DOIs	https://doi.org/10.1016/S0168-583X(02)01556-2
Publikationsstatus	Veröffentlicht - Jan. 2003

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10.1016/S0168-583X(02)01556-2

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Kolobov, A. V., Oyanagi, H., Frenkel, A., Robinson, I., Cross, J., Wei, S., Brunner, K., Abstreiter, G., Maeda, Y., Shklyaev, A., Ichikawa, M., Yamasaki, S., & Tanaka, K. (2003). Local structure of Ge/Si nanostructures: Uniqueness of XAFS spectroscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 199, 174-178. https://doi.org/10.1016/S0168-583X(02)01556-2

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title = "Local structure of Ge/Si nanostructures: Uniqueness of XAFS spectroscopy",

abstract = "The local structure of Ge/Si nanostructures was discussed using x-ray absorption fine structure (XAFS) spectroscopy. The samples were found to be grown by molecular beam epitaxy (MBE) on Si substrate at three different temperatures of 510, 550 and 745 °C. The analysis showed that the combined diffraction anomalous fine structure (DAFS)-EXAFS analysis allowed to separate the structural parameters of the intermixed nanocrystalline and amorphous phases.",

keywords = "DAFS, EXAFS, Ge nanostructures, Nanocrystals, Quantum dots, Raman scattering",

author = "Kolobov, {A. V.} and H. Oyanagi and A. Frenkel and I. Robinson and J. Cross and S. Wei and K. Brunner and G. Abstreiter and Y. Maeda and A. Shklyaev and M. Ichikawa and S. Yamasaki and K. Tanaka",

year = "2003",

month = jan,

doi = "10.1016/S0168-583X(02)01556-2",

language = "English",

volume = "199",

pages = "174--178",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

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Kolobov, AV, Oyanagi, H, Frenkel, A, Robinson, I, Cross, J, Wei, S, Brunner, K, Abstreiter, G, Maeda, Y, Shklyaev, A, Ichikawa, M, Yamasaki, S & Tanaka, K 2003, 'Local structure of Ge/Si nanostructures: Uniqueness of XAFS spectroscopy', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Jg. 199, S. 174-178. https://doi.org/10.1016/S0168-583X(02)01556-2

TY - JOUR

T1 - Local structure of Ge/Si nanostructures

T2 - Uniqueness of XAFS spectroscopy

AU - Kolobov, A. V.

AU - Oyanagi, H.

AU - Frenkel, A.

AU - Robinson, I.

AU - Cross, J.

AU - Wei, S.

AU - Brunner, K.

AU - Abstreiter, G.

AU - Maeda, Y.

AU - Shklyaev, A.

AU - Ichikawa, M.

AU - Yamasaki, S.

AU - Tanaka, K.

PY - 2003/1

Y1 - 2003/1

N2 - The local structure of Ge/Si nanostructures was discussed using x-ray absorption fine structure (XAFS) spectroscopy. The samples were found to be grown by molecular beam epitaxy (MBE) on Si substrate at three different temperatures of 510, 550 and 745 °C. The analysis showed that the combined diffraction anomalous fine structure (DAFS)-EXAFS analysis allowed to separate the structural parameters of the intermixed nanocrystalline and amorphous phases.

AB - The local structure of Ge/Si nanostructures was discussed using x-ray absorption fine structure (XAFS) spectroscopy. The samples were found to be grown by molecular beam epitaxy (MBE) on Si substrate at three different temperatures of 510, 550 and 745 °C. The analysis showed that the combined diffraction anomalous fine structure (DAFS)-EXAFS analysis allowed to separate the structural parameters of the intermixed nanocrystalline and amorphous phases.

KW - DAFS

KW - EXAFS

KW - Ge nanostructures

KW - Nanocrystals

KW - Quantum dots

KW - Raman scattering

UR - http://www.scopus.com/inward/record.url?scp=0037238036&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(02)01556-2

DO - 10.1016/S0168-583X(02)01556-2

M3 - Article

AN - SCOPUS:0037238036

SN - 0168-583X

VL - 199

SP - 174

EP - 178

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Local structure of Ge/Si nanostructures: Uniqueness of XAFS spectroscopy

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