Light scattering by acoustic phonons in unhydrogenated and hydrogenated amorphous silicon

E. Bustarret, C. Thomsen, M. Stutzmann, A. Asano, C. Summonte

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

2 Zitate (Scopus)


Brillouin and Raman spectroscopies have been applied to dense undoped films, either multiple-energy Si-implanted a-Si layers or device-grade a-Si:H layers deposited by glow-discharge. The frequencies of the surface (Rayleigh) and longitudinal acoustic Brillouin peaks were compared to those measured on crystalline {111} and {100} silicon (c-Si) surfaces, yielding longitudinal sound velocities of 6.1 km/s in a-Si and 8.9 km/s in a-Si:H, and surface phonon velocities of 4.1 km/s in a-Si and 4.85 km/s in a-Si:H. We confirm the existence of a local hydrogen-related mode around 210 cm-1 in a-Si:H and propose a careful analysis of the low-energy Raman scattering by acoustic phonons: the normalised TA Raman intensity in a-Si, with a threshold around 30 cm-1, reached above 50 cm-1 the scattered light level detected in a-Si:H. A low-frequency background of excitations, involving among other possibilities multiphonon processes and in particular LA ± TA combination modes, was confirmed to exist in plasma-deposited a-Si:H.

Seiten (von - bis)927-930
FachzeitschriftJournal of Non-Crystalline Solids
AusgabenummerPART 2
PublikationsstatusVeröffentlicht - 2 Dez. 1993
Extern publiziertJa


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