Light emission from hot carriers in polar semiconductor devices

P. Lugli, A. Di Carlo, P. Vogl, G. Zandler

Publikation: Beitrag in FachzeitschriftKonferenzartikelBegutachtung


We present a theoretical study of hot-carrier induced light emission in III-V semiconductor devices. Carrier heating under the intense electric fields present under high bias conditions are studied via a self-consistent Monte Carlo simulations. The carrier distribution functions obtained from the simulation are then incorporated into a psuedopotential algorithm that describes the direct optical transitions and calculates the corresponding spectra. We show that the light emission due to hot carriers is dominated by direct radiative interband transitions within the conduction and valence bands. Good agreement between theory and experiment is obtained for GaAs MESFET and GaAs/AlGaAs HBTs.

Seiten (von - bis)196-207
FachzeitschriftProceedings of SPIE - The International Society for Optical Engineering
PublikationsstatusVeröffentlicht - 1993
VeranstaltungPhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italien
Dauer: 23 Mai 199328 Mai 1993


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