Lateral structuring of silicon thin films by interference crystallization

M. Heintze; P. V. Santos; C. E. Nebel; M. Stutzmann

doi:10.1063/1.111347

Lateral structuring of silicon thin films by interference crystallization

M. Heintze, P. V. Santos, C. E. Nebel, M. Stutzmann

TUM Emeriti of Excellence

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

48 Zitate (Scopus)

Abstract

Laterally structured microcrystalline silicon in the submicron range has been produced from amorphous silicon thin films by transient holography using a high-energy pulse laser. The energy density along the lines of the transient optical grid is sufficient to induce crystallization at the intensity maxima. Large area laterally structured microcrystalline silicon has been produced by selectively etching the amorphous phase with simultaneous growth of μc-Si:H in a hydrogen-silane plasma.

Originalsprache	Englisch
Seiten (von - bis)	3148-3150
Seitenumfang	3
Fachzeitschrift	Applied Physics Letters
Jahrgang	64
Ausgabenummer	23
DOIs	https://doi.org/10.1063/1.111347
Publikationsstatus	Veröffentlicht - 1994

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title = "Lateral structuring of silicon thin films by interference crystallization",

abstract = "Laterally structured microcrystalline silicon in the submicron range has been produced from amorphous silicon thin films by transient holography using a high-energy pulse laser. The energy density along the lines of the transient optical grid is sufficient to induce crystallization at the intensity maxima. Large area laterally structured microcrystalline silicon has been produced by selectively etching the amorphous phase with simultaneous growth of μc-Si:H in a hydrogen-silane plasma.",

author = "M. Heintze and Santos, {P. V.} and Nebel, {C. E.} and M. Stutzmann",

year = "1994",

doi = "10.1063/1.111347",

language = "English",

volume = "64",

pages = "3148--3150",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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AU - Heintze, M.

AU - Santos, P. V.

AU - Nebel, C. E.

AU - Stutzmann, M.

PY - 1994

Y1 - 1994

N2 - Laterally structured microcrystalline silicon in the submicron range has been produced from amorphous silicon thin films by transient holography using a high-energy pulse laser. The energy density along the lines of the transient optical grid is sufficient to induce crystallization at the intensity maxima. Large area laterally structured microcrystalline silicon has been produced by selectively etching the amorphous phase with simultaneous growth of μc-Si:H in a hydrogen-silane plasma.

AB - Laterally structured microcrystalline silicon in the submicron range has been produced from amorphous silicon thin films by transient holography using a high-energy pulse laser. The energy density along the lines of the transient optical grid is sufficient to induce crystallization at the intensity maxima. Large area laterally structured microcrystalline silicon has been produced by selectively etching the amorphous phase with simultaneous growth of μc-Si:H in a hydrogen-silane plasma.

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U2 - 10.1063/1.111347

DO - 10.1063/1.111347

M3 - Article

AN - SCOPUS:0028766484

SN - 0003-6951

VL - 64

SP - 3148

EP - 3150

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Lateral structuring of silicon thin films by interference crystallization

Abstract

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