Laser crystallisation of silicon-germanium alloys

Keyphrases

• Silicon-germanium Alloy 100%
• Laser Crystallization 100%
• Crystallization 50%
• Si Film 50%
• Laser Interference 50%
• Lateral Grain Growth 50%
• Interference Pattern 50%
• In Situ 25%
• Scanning Laser 25%
• Conductance 25%
• Germanium 25%
• Photocurrent 25%
• Atomic Force Microscopy 25%
• Crystallization Process 25%
• Grain Boundary 25%
• Lateral Growth 25%
• Grain Size 25%
• Ge Film 25%
• Thin-film Silicon 25%
• Anisotropic Behavior 25%
• Growth Direction 25%
• Absorption Coefficient 25%
• Selective Etching 25%
• Effusion Cell 25%
• Photothermal Deflection Spectroscopy 25%
• SiGe Film 25%
• E-beam Evaporator 25%
• Single Pulse Laser 25%
• Silicon-germanium 25%

Engineering

• Interference Pattern 100%
• Photocurrent 50%
• Atomic Force Microscopy 50%
• Crystallizes 50%
• Lateral Growth 50%
• Evaporator 50%
• Single Pulse 50%
• Anisotropic Behavior 50%
• Selective Etching 50%
• Absorptivity 50%
• Absorption Coefficient 50%
• Grain Size 50%

Material Science

• Film 100%
• Si-Ge Alloys 100%
• Silicon 66%
• Germanium 66%
• Atomic Force Microscopy 33%
• Crystallization 33%
• Grain Size 33%
• Laser Pulse 33%
• Grain Boundary 33%