Abstract
Due to the low resistance level of Impatt diodes, common 50-ohm measurement techniques yield results of low accuracy. In this paper, a simple method for determining negative resistance versus rf-current from dc-current and rf-power measurement is presented. The technique is based on the property of the Impatt diode that shows power saturation when rf-voltage exceeds one half of the dc-bias voltage. Measurement results are given for a 100 mw Impatt diode at 10 GHz.
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 280-282 |
| Seitenumfang | 3 |
| Fachzeitschrift | NTZ Nachr Z NTZ Commun J |
| Jahrgang | 27 |
| Ausgabenummer | 7 |
| Publikationsstatus | Veröffentlicht - 1974 |