Investigation of the thermal noise of MOS transistors under analog and RF operating conditions

Ralf Brederlow, Georg Wenig, Roland Thewes

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

8 Zitate (Scopus)

Abstract

We investigate the thermal noise behavior of modern MOS transistors under analog and RF operating conditions. Compared to the noise model used for circuit simulation the measured noise is higher for large gate and drain voltages. This phenomenon is explained by using a new formulation of the classical noise theory which is appropriate for modern short channel devices.

OriginalspracheEnglisch
TitelEuropean Solid-State Device Research Conference
Redakteure/-innenElena Gnani, Giorgio Baccarani, Massimo Rudan
Herausgeber (Verlag)IEEE Computer Society
Seiten87-90
Seitenumfang4
ISBN (elektronisch)8890084782
DOIs
PublikationsstatusVeröffentlicht - 2002
Extern publiziertJa
Veranstaltung32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italien
Dauer: 24 Sept. 200226 Sept. 2002

Publikationsreihe

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Konferenz

Konferenz32nd European Solid-State Device Research Conference, ESSDERC 2002
Land/GebietItalien
OrtFirenze
Zeitraum24/09/0226/09/02

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