Investigation of Gate Current Shaping for SiC-based Power Modules on Electrical Drive System Power Losses

Mohamad Sayed, Samuel Araujo, Federico Carraro, Ralph Kennel

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

7 Zitate (Scopus)

Abstract

An adjustable current source driver based on shaping the gate current of a SiC MOSFET is presented in this paper. A sequential optimization algorithm to reduce the turn-on and turn-off switching losses while maintaining equal device stress is developed. The proposed driver uses the maximum operating conditions in the entire operating range, in contrast to commercial drivers which are usually designed for a worst-case operating point. Thus, an improvement on full load as well as on partial load conditions is attained in comparison to the conventional voltage source driver. At system level, the reduction of switching losses lead to an improvement of the inverter efficiency and to a reduction of the electrical drive WLTP cycle losses by 7%.

OriginalspracheEnglisch
Titel2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
ISBN (elektronisch)9789075815375
PublikationsstatusVeröffentlicht - 6 Sept. 2021
Veranstaltung23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe - Ghent, Belgien
Dauer: 6 Sept. 202110 Sept. 2021

Publikationsreihe

Name2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe

Konferenz

Konferenz23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe
Land/GebietBelgien
OrtGhent
Zeitraum6/09/2110/09/21

Fingerprint

Untersuchen Sie die Forschungsthemen von „Investigation of Gate Current Shaping for SiC-based Power Modules on Electrical Drive System Power Losses“. Zusammen bilden sie einen einzigartigen Fingerprint.

Dieses zitieren