Interstitial solid solution Hf5GaxSn3 (x = 0-1)

I. Voznyak; Ya Tokaychuk; V. Hlukhyy; T. F. Fässler; R. Gladyshevskii

doi:10.1016/j.jallcom.2011.09.075

Interstitial solid solution Hf₅Ga_xSn₃ (x = 0-1)

I. Voznyak, Ya Tokaychuk, V. Hlukhyy, T. F. Fässler, R. Gladyshevskii

Lehrstuhl für Anorganische Chemie mit Schwerpunkt Neue Materialien

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

4 Zitate (Scopus)

Abstract

Formation of an interstitial solid solution Hf₅Ga _xSn₃ (x = 0-1) based on the binary compound Hf ₅Sn₃ (structure type Mn₅Si₃, Pearson symbol hP16, space group P6₃/mcm, a = 8.36562(6), c = 5.70775(4) from X-ray powder diffraction) was established at 600 °C. The crystal structure (structure type Hf₅CuSn₃, ordered derivative of Ti₅Ga₄, hP18, P6₃/mcm) was refined on X-ray single-crystal diffraction data for three compositions: Hf₅Ga _0.16(3)Sn₃ (a = 8.3288(12), c = 5.6988(11) ), Hf ₅Ga_0.53(2)Sn₃ (a = 8.4205(12), c = 5.7655(12) ) and Hf₅GaSn₃ (a = 8.5564(12), c = 5.7859(12) ). The Ga atoms occupy Wyckoff position 2b at the centres of Hf₆ octahedral interstices.

Originalsprache	Englisch
Seiten (von - bis)	246-251
Seitenumfang	6
Fachzeitschrift	Journal of Alloys and Compounds
Jahrgang	512
Ausgabenummer	1
DOIs	https://doi.org/10.1016/j.jallcom.2011.09.075
Publikationsstatus	Veröffentlicht - 25 Jan. 2012

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title = "Interstitial solid solution Hf5GaxSn3 (x = 0-1)",

abstract = "Formation of an interstitial solid solution Hf5Ga xSn3 (x = 0-1) based on the binary compound Hf 5Sn3 (structure type Mn5Si3, Pearson symbol hP16, space group P63/mcm, a = 8.36562(6), c = 5.70775(4) from X-ray powder diffraction) was established at 600 °C. The crystal structure (structure type Hf5CuSn3, ordered derivative of Ti5Ga4, hP18, P63/mcm) was refined on X-ray single-crystal diffraction data for three compositions: Hf5Ga 0.16(3)Sn3 (a = 8.3288(12), c = 5.6988(11) ), Hf 5Ga0.53(2)Sn3 (a = 8.4205(12), c = 5.7655(12) ) and Hf5GaSn3 (a = 8.5564(12), c = 5.7859(12) ). The Ga atoms occupy Wyckoff position 2b at the centres of Hf6 octahedral interstices.",

keywords = "Crystal structure, Gallium, Hafnium, Solid solution, Tin, X-ray diffraction",

author = "I. Voznyak and Ya Tokaychuk and V. Hlukhyy and F{\"a}ssler, {T. F.} and R. Gladyshevskii",

note = "Funding Information: This work was supported by the Ministry of Ukraine for Education and Science under the Grant no. 0109U002071 and by a Leonhard Euler stipendium of DAAD (I.V.) .",

year = "2012",

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doi = "10.1016/j.jallcom.2011.09.075",

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T1 - Interstitial solid solution Hf5GaxSn3 (x = 0-1)

AU - Voznyak, I.

AU - Tokaychuk, Ya

AU - Hlukhyy, V.

AU - Fässler, T. F.

AU - Gladyshevskii, R.

N1 - Funding Information: This work was supported by the Ministry of Ukraine for Education and Science under the Grant no. 0109U002071 and by a Leonhard Euler stipendium of DAAD (I.V.) .

PY - 2012/1/25

Y1 - 2012/1/25

N2 - Formation of an interstitial solid solution Hf5Ga xSn3 (x = 0-1) based on the binary compound Hf 5Sn3 (structure type Mn5Si3, Pearson symbol hP16, space group P63/mcm, a = 8.36562(6), c = 5.70775(4) from X-ray powder diffraction) was established at 600 °C. The crystal structure (structure type Hf5CuSn3, ordered derivative of Ti5Ga4, hP18, P63/mcm) was refined on X-ray single-crystal diffraction data for three compositions: Hf5Ga 0.16(3)Sn3 (a = 8.3288(12), c = 5.6988(11) ), Hf 5Ga0.53(2)Sn3 (a = 8.4205(12), c = 5.7655(12) ) and Hf5GaSn3 (a = 8.5564(12), c = 5.7859(12) ). The Ga atoms occupy Wyckoff position 2b at the centres of Hf6 octahedral interstices.

AB - Formation of an interstitial solid solution Hf5Ga xSn3 (x = 0-1) based on the binary compound Hf 5Sn3 (structure type Mn5Si3, Pearson symbol hP16, space group P63/mcm, a = 8.36562(6), c = 5.70775(4) from X-ray powder diffraction) was established at 600 °C. The crystal structure (structure type Hf5CuSn3, ordered derivative of Ti5Ga4, hP18, P63/mcm) was refined on X-ray single-crystal diffraction data for three compositions: Hf5Ga 0.16(3)Sn3 (a = 8.3288(12), c = 5.6988(11) ), Hf 5Ga0.53(2)Sn3 (a = 8.4205(12), c = 5.7655(12) ) and Hf5GaSn3 (a = 8.5564(12), c = 5.7859(12) ). The Ga atoms occupy Wyckoff position 2b at the centres of Hf6 octahedral interstices.

KW - Crystal structure

KW - Gallium

KW - Hafnium

KW - Solid solution

KW - Tin

KW - X-ray diffraction

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U2 - 10.1016/j.jallcom.2011.09.075

DO - 10.1016/j.jallcom.2011.09.075

M3 - Article

AN - SCOPUS:80555130948

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JO - Journal of Alloys and Compounds

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