III-V-on-silicon 2-μm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors

Ruijun Wang, Muhammad Muneeb, Stephan Sprengel, Gerhard Boehm, Aditya Malik, Roel Baets, Markus Christian Amann, Gunther Roelkens

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

36 Zitate (Scopus)

Abstract

2-μm-wavelength-range silicon-on-insulator (SOI) arrayed waveguide gratings (AWGs) with heterogeneously integrated InP-based type-II quantum well photodetectors are presented. Low insertion loss (2.5- 3 dB) and low crosstalk (-30 to -25 dB) AWGs are realized. The InP-based type-II photodetectors are integrated with the AWGs using two different coupling approaches. Adiabatic-taper-based photodetectors show a responsivity of 1.6 A/W at 2.35 μm wavelength and dark current of 10 nA at -0.5 V, while photodetectors using grating-assisted coupling have a responsivity of 0.1 A/W and dark current of 5 nA at -0.5 V. The integration of the photodetector array does not degrade the insertion loss and crosstalk of the device. The photodetector epitaxial stack can also be used to realize the integration of a broadband light source, thereby enabling fully integrated spectroscopic systems.

OriginalspracheEnglisch
Seiten (von - bis)8480-8490
Seitenumfang11
FachzeitschriftOptics Express
Jahrgang24
Ausgabenummer8
DOIs
PublikationsstatusVeröffentlicht - 18 Apr. 2016

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