Abstract
We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, for both low (1%) and high (13%) Mn doping values, the electronic character of the states near the top of the valence band. Magnetization and temperature-dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.
Originalsprache | Englisch |
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Aufsatznummer | 097201 |
Fachzeitschrift | Physical Review Letters |
Jahrgang | 111 |
Ausgabenummer | 9 |
DOIs | |
Publikationsstatus | Veröffentlicht - 27 Aug. 2013 |
Extern publiziert | Ja |