Hydrogen in gallium nitride grown by MOCVD

Keyphrases

• Acceptor Activation 50%
• Activated Hydrogen 50%
• Activation Energy 50%
• Ammonia 100%
• Bulk Material 50%
• Deposition Rate 50%
• Deuterium 50%
• Deuterium Incorporation 50%
• Elastic Recoil Detection Analysis 50%
• Epitaxial GaN 50%
• Gallium Nitride 100%
• GaN-on-sapphire 50%
• H2 Carrier 50%
• Hydrogen Effusion 100%
• Hydrogen Substitution 50%
• Isotopic Substitution 50%
• Magnesium Doped 50%
• Mass Spectrometry 50%
• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• Metal-organic Complex 50%
• Molecular Hydrogen 50%
• N-type GaN 50%
• Reaction Products 50%
• Structural Properties 50%
• Substrate Temperature 50%
• Temperature Range 50%
• Thermal Desorption 50%
• Thermally Activated Processes 50%
• Total Concentration 50%
• Trimethylgallium 50%

Chemical Engineering

• Deposition Rate 50%
• Deuterium 100%
• Film 50%
• Gallium Nitride 100%
• Mass Spectrometry 50%
• Metallorganic Chemical Vapor Deposition 100%
• Thermal Desorption 50%

Material Science

• Activation Energy 50%
• Desorption 50%
• Deuterium 100%
• Gallium Nitride 100%
• Magnesium 50%
• Sapphire 50%
• Structural Property 50%
• Thin Films 50%