Abstract
The hydrogenation control of ferromagnetism in dilute magnetic semiconductor (DMS) such as Ga1-xMnxAs was analyzed. The samples were found to be paramagnetic after hydrogenation with a Brillouin-type magnetization curve at T = 2 K. Controlled incorporation of deuterium or hydrogen permitted to tune hole density and magnetic properties both laterally as well as in depth of thin films. The results show that density of free holes p is significantly reduced by plasma process.
Originalsprache | Englisch |
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Aufsatznummer | 227202 |
Seiten (von - bis) | 227202-1-227202-4 |
Fachzeitschrift | Physical Review Letters |
Jahrgang | 92 |
Ausgabenummer | 22 |
DOIs | |
Publikationsstatus | Veröffentlicht - 4 Juli 2004 |
Extern publiziert | Ja |