Hydrogen control of ferromagnetism in a dilute magnetic semiconductor

Sebastian T.B. Goennenwein, Thomas A. Wassner, Hans Huebl, Martin S. Brandt, Jan B. Philipp, Matthias Opel, Rudolf Gross, Achim Koeder, Wladimir Schoch, Andreas Waag

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

74 Zitate (Scopus)

Abstract

The hydrogenation control of ferromagnetism in dilute magnetic semiconductor (DMS) such as Ga1-xMnxAs was analyzed. The samples were found to be paramagnetic after hydrogenation with a Brillouin-type magnetization curve at T = 2 K. Controlled incorporation of deuterium or hydrogen permitted to tune hole density and magnetic properties both laterally as well as in depth of thin films. The results show that density of free holes p is significantly reduced by plasma process.

OriginalspracheEnglisch
Aufsatznummer227202
Seiten (von - bis)227202-1-227202-4
FachzeitschriftPhysical Review Letters
Jahrgang92
Ausgabenummer22
DOIs
PublikationsstatusVeröffentlicht - 4 Juli 2004
Extern publiziertJa

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