High-temperature 2.5 Gb/s vertical-cavity surface-emitting lasers at 1.55 μm wavelength

M. Ortsiefer; R. Shau; G. Böhm; F. Köhler; J. Roßkopf; G. Steinle; C. Degen; M. C. Amann

High-temperature 2.5 Gb/s vertical-cavity surface-emitting lasers at 1.55 μm wavelength

M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, J. Roßkopf, G. Steinle, C. Degen, M. C. Amann

Lehrstuhl für Halbleitertechnologie

Walter Schottky Institut

Publikation: Konferenzbeitrag › Papier › Begutachtung

19 Zitate (Scopus)

Abstract

The buried tunnel junction (BTJ) vertical-cavity surface-emitting lasers (VCSEL) were fabricated on InP for 1.55 μm wavelength. The stationary and dynamic characteristics of the high-temperature 2.5 Gb/s 1.55 μm BTJ-VCSELs fulfilling datacom specifications were also obtained. The results showed that a modulation bandwidth of 10 Gb/s could be achieved by the use of BJT-VCSELs with the ultra-low series resistances, for the 1.55 μm telecommunication wavelength range.

Originalsprache	Englisch
Seiten	44-45
Seitenumfang	2
Publikationsstatus	Veröffentlicht - 2001
Veranstaltung	27th European Conference on optical Communication - Amsterdam, Niederlande Dauer: 30 Sept. 2001 → 4 Okt. 2001

Konferenz

Konferenz	27th European Conference on optical Communication
Land/Gebiet	Niederlande
Ort	Amsterdam
Zeitraum	30/09/01 → 4/10/01

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title = "High-temperature 2.5 Gb/s vertical-cavity surface-emitting lasers at 1.55 μm wavelength",

abstract = "The buried tunnel junction (BTJ) vertical-cavity surface-emitting lasers (VCSEL) were fabricated on InP for 1.55 μm wavelength. The stationary and dynamic characteristics of the high-temperature 2.5 Gb/s 1.55 μm BTJ-VCSELs fulfilling datacom specifications were also obtained. The results showed that a modulation bandwidth of 10 Gb/s could be achieved by the use of BJT-VCSELs with the ultra-low series resistances, for the 1.55 μm telecommunication wavelength range.",

author = "M. Ortsiefer and R. Shau and G. B{\"o}hm and F. K{\"o}hler and J. Ro{\ss}kopf and G. Steinle and C. Degen and Amann, {M. C.}",

year = "2001",

language = "English",

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note = "27th European Conference on optical Communication ; Conference date: 30-09-2001 Through 04-10-2001",

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T1 - High-temperature 2.5 Gb/s vertical-cavity surface-emitting lasers at 1.55 μm wavelength

AU - Ortsiefer, M.

AU - Shau, R.

AU - Böhm, G.

AU - Köhler, F.

AU - Roßkopf, J.

AU - Steinle, G.

AU - Degen, C.

AU - Amann, M. C.

PY - 2001

Y1 - 2001

N2 - The buried tunnel junction (BTJ) vertical-cavity surface-emitting lasers (VCSEL) were fabricated on InP for 1.55 μm wavelength. The stationary and dynamic characteristics of the high-temperature 2.5 Gb/s 1.55 μm BTJ-VCSELs fulfilling datacom specifications were also obtained. The results showed that a modulation bandwidth of 10 Gb/s could be achieved by the use of BJT-VCSELs with the ultra-low series resistances, for the 1.55 μm telecommunication wavelength range.

AB - The buried tunnel junction (BTJ) vertical-cavity surface-emitting lasers (VCSEL) were fabricated on InP for 1.55 μm wavelength. The stationary and dynamic characteristics of the high-temperature 2.5 Gb/s 1.55 μm BTJ-VCSELs fulfilling datacom specifications were also obtained. The results showed that a modulation bandwidth of 10 Gb/s could be achieved by the use of BJT-VCSELs with the ultra-low series resistances, for the 1.55 μm telecommunication wavelength range.

UR - http://www.scopus.com/inward/record.url?scp=0035741643&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035741643

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EP - 45

T2 - 27th European Conference on optical Communication

Y2 - 30 September 2001 through 4 October 2001

ER -

High-temperature 2.5 Gb/s vertical-cavity surface-emitting lasers at 1.55 μm wavelength

Abstract

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