Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As

P. Torelli; M. Sperl; R. Ciancio; J. Fujii; C. Rinaldi; M. Cantoni; R. Bertacco; M. Utz; D. Bougeard; M. Soda; E. Carlino; G. Rossi; C. H. Back; G. Panaccione

doi:10.1088/0957-4484/23/46/465202

Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As

P. Torelli, M. Sperl, R. Ciancio, J. Fujii, C. Rinaldi, M. Cantoni, R. Bertacco, M. Utz, D. Bougeard, M. Soda, E. Carlino, G. Rossi, C. H. Back, G. Panaccione

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

7 Zitate (Scopus)

Abstract

We have grown an ultrathin epitaxial Fe/MgO bilayer on (Ga, Mn)As by e-beam evaporation in UHV. The system structure has been investigated by high resolution transmission electron microscopy (TEM) experiments which show that the Fe and MgO films, covering completely the (Ga, Mn)As, grow with the epitaxial relationship Fe[100](001)∥MgO[110](001)∥(Ga,Mn)As[110](001). The magnetic reversal process, studied by the magneto-optical Kerr effect (MOKE) at room temperature, demonstrates that the iron is ferromagnetic and possesses a cubic anisotropy, confirming the epitaxy relationship found with TEM. Resistivity measurements across the barrier display a non-Ohmic behavior characterized by cubic conductance as a function of the applied voltage suggesting tunneling-dominated transport across the barrier.

Originalsprache	Englisch
Aufsatznummer	465202
Fachzeitschrift	Nanotechnology
Jahrgang	23
Ausgabenummer	46
DOIs	https://doi.org/10.1088/0957-4484/23/46/465202
Publikationsstatus	Veröffentlicht - 23 Nov. 2012
Extern publiziert	Ja

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10.1088/0957-4484/23/46/465202

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title = "Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As",

abstract = "We have grown an ultrathin epitaxial Fe/MgO bilayer on (Ga, Mn)As by e-beam evaporation in UHV. The system structure has been investigated by high resolution transmission electron microscopy (TEM) experiments which show that the Fe and MgO films, covering completely the (Ga, Mn)As, grow with the epitaxial relationship Fe[100](001)∥MgO[110](001)∥(Ga,Mn)As[110](001). The magnetic reversal process, studied by the magneto-optical Kerr effect (MOKE) at room temperature, demonstrates that the iron is ferromagnetic and possesses a cubic anisotropy, confirming the epitaxy relationship found with TEM. Resistivity measurements across the barrier display a non-Ohmic behavior characterized by cubic conductance as a function of the applied voltage suggesting tunneling-dominated transport across the barrier.",

author = "P. Torelli and M. Sperl and R. Ciancio and J. Fujii and C. Rinaldi and M. Cantoni and R. Bertacco and M. Utz and D. Bougeard and M. Soda and E. Carlino and G. Rossi and Back, {C. H.} and G. Panaccione",

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day = "23",

doi = "10.1088/0957-4484/23/46/465202",

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T1 - Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As

AU - Torelli, P.

AU - Sperl, M.

AU - Ciancio, R.

AU - Fujii, J.

AU - Rinaldi, C.

AU - Cantoni, M.

AU - Bertacco, R.

AU - Utz, M.

AU - Bougeard, D.

AU - Soda, M.

AU - Carlino, E.

AU - Rossi, G.

AU - Back, C. H.

AU - Panaccione, G.

PY - 2012/11/23

Y1 - 2012/11/23

N2 - We have grown an ultrathin epitaxial Fe/MgO bilayer on (Ga, Mn)As by e-beam evaporation in UHV. The system structure has been investigated by high resolution transmission electron microscopy (TEM) experiments which show that the Fe and MgO films, covering completely the (Ga, Mn)As, grow with the epitaxial relationship Fe[100](001)∥MgO[110](001)∥(Ga,Mn)As[110](001). The magnetic reversal process, studied by the magneto-optical Kerr effect (MOKE) at room temperature, demonstrates that the iron is ferromagnetic and possesses a cubic anisotropy, confirming the epitaxy relationship found with TEM. Resistivity measurements across the barrier display a non-Ohmic behavior characterized by cubic conductance as a function of the applied voltage suggesting tunneling-dominated transport across the barrier.

AB - We have grown an ultrathin epitaxial Fe/MgO bilayer on (Ga, Mn)As by e-beam evaporation in UHV. The system structure has been investigated by high resolution transmission electron microscopy (TEM) experiments which show that the Fe and MgO films, covering completely the (Ga, Mn)As, grow with the epitaxial relationship Fe[100](001)∥MgO[110](001)∥(Ga,Mn)As[110](001). The magnetic reversal process, studied by the magneto-optical Kerr effect (MOKE) at room temperature, demonstrates that the iron is ferromagnetic and possesses a cubic anisotropy, confirming the epitaxy relationship found with TEM. Resistivity measurements across the barrier display a non-Ohmic behavior characterized by cubic conductance as a function of the applied voltage suggesting tunneling-dominated transport across the barrier.

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DO - 10.1088/0957-4484/23/46/465202

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JO - Nanotechnology

JF - Nanotechnology

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ER -

Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As

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