Growth and characterization of strained Si1 - XGex multi-quantum-well waveguide photodetectors on (110) Si for 1.3 and 1.55 μm

K. Bernhard-Höfer; A. Zrenner; J. Brunner; G. Abstreiter; F. Wittmann; I. Eisele

doi:10.1016/S1386-9477(98)00154-4

Growth and characterization of strained Si_{1 - X}Ge_x multi-quantum-well waveguide photodetectors on (110) Si for 1.3 and 1.55 μm

K. Bernhard-Höfer, A. Zrenner, J. Brunner, G. Abstreiter, F. Wittmann, I. Eisele

TUM Emeriti of Excellence

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

4 Zitate (Scopus)

Abstract

Pseudomorphic Si_{1 - x}Ge_x/Si multi-quantum well p-i-n photodiodes have been grown on (110) Si by molecular beam epitaxy. Using waveguide geometry we have obtained an external quantum efficiency of 17% at 1.32 μm (TE-polarisation) with a Ge mole fraction of x = 0.5. At λ = 1.52 μm (TE-polarisation) an external quantum efficiency of 7% has been achieved. From the dependence of photocurrent on device length effective interband absorption coefficients for x = 0.5 and 0.37 have been determined quantitatively.

Originalsprache	Englisch
Seiten (von - bis)	753-757
Seitenumfang	5
Fachzeitschrift	Physica E: Low-Dimensional Systems and Nanostructures
Jahrgang	2
Ausgabenummer	1-4
DOIs	https://doi.org/10.1016/S1386-9477(98)00154-4
Publikationsstatus	Veröffentlicht - 15 Juli 1998

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title = "Growth and characterization of strained Si1 - XGex multi-quantum-well waveguide photodetectors on (110) Si for 1.3 and 1.55 μm",

abstract = "Pseudomorphic Si1 - xGex/Si multi-quantum well p-i-n photodiodes have been grown on (110) Si by molecular beam epitaxy. Using waveguide geometry we have obtained an external quantum efficiency of 17% at 1.32 μm (TE-polarisation) with a Ge mole fraction of x = 0.5. At λ = 1.52 μm (TE-polarisation) an external quantum efficiency of 7% has been achieved. From the dependence of photocurrent on device length effective interband absorption coefficients for x = 0.5 and 0.37 have been determined quantitatively.",

keywords = "Interband transitions, Molecular beam epitaxy, Silicon alloys, Waveguides",

author = "K. Bernhard-H{\"o}fer and A. Zrenner and J. Brunner and G. Abstreiter and F. Wittmann and I. Eisele",

year = "1998",

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T1 - Growth and characterization of strained Si1 - XGex multi-quantum-well waveguide photodetectors on (110) Si for 1.3 and 1.55 μm

AU - Bernhard-Höfer, K.

AU - Zrenner, A.

AU - Brunner, J.

AU - Abstreiter, G.

AU - Wittmann, F.

AU - Eisele, I.

PY - 1998/7/15

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N2 - Pseudomorphic Si1 - xGex/Si multi-quantum well p-i-n photodiodes have been grown on (110) Si by molecular beam epitaxy. Using waveguide geometry we have obtained an external quantum efficiency of 17% at 1.32 μm (TE-polarisation) with a Ge mole fraction of x = 0.5. At λ = 1.52 μm (TE-polarisation) an external quantum efficiency of 7% has been achieved. From the dependence of photocurrent on device length effective interband absorption coefficients for x = 0.5 and 0.37 have been determined quantitatively.

AB - Pseudomorphic Si1 - xGex/Si multi-quantum well p-i-n photodiodes have been grown on (110) Si by molecular beam epitaxy. Using waveguide geometry we have obtained an external quantum efficiency of 17% at 1.32 μm (TE-polarisation) with a Ge mole fraction of x = 0.5. At λ = 1.52 μm (TE-polarisation) an external quantum efficiency of 7% has been achieved. From the dependence of photocurrent on device length effective interband absorption coefficients for x = 0.5 and 0.37 have been determined quantitatively.

KW - Interband transitions

KW - Molecular beam epitaxy

KW - Silicon alloys

KW - Waveguides

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