Free standing modulation doped core-shell GaAs/AlGaAs hetero-nanowires

Dance Spirkoska; Anna Fontcuberta i Morral; Joseph Dufouleur; Qiushi Xie; Gerhard Abstreiter

doi:10.1002/pssr.201105338

Free standing modulation doped core-shell GaAs/AlGaAs hetero-nanowires

Dance Spirkoska, Anna Fontcuberta i Morral, Joseph Dufouleur, Qiushi Xie, Gerhard Abstreiter

Natural Sciences

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

31 Zitate (Scopus)

Abstract

Modulation doped AlGaAs/GaAs core-shell nanowire structures were grown by molecular beam epitaxy. A Si delta-doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. However, they show a pronounced persistent photoconductivity effect indicating activation of free carriers from the delta-doped shell to the GaAs core. The n-type character of the channel is demonstrated by applying a back-gate voltage.

Originalsprache	Englisch
Seiten (von - bis)	353-355
Seitenumfang	3
Fachzeitschrift	Physica Status Solidi - Rapid Research Letters
Jahrgang	5
Ausgabenummer	9
DOIs	https://doi.org/10.1002/pssr.201105338
Publikationsstatus	Veröffentlicht - Sept. 2011

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abstract = "Modulation doped AlGaAs/GaAs core-shell nanowire structures were grown by molecular beam epitaxy. A Si delta-doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. However, they show a pronounced persistent photoconductivity effect indicating activation of free carriers from the delta-doped shell to the GaAs core. The n-type character of the channel is demonstrated by applying a back-gate voltage.",

keywords = "AlGaAs, Core-shell nanowires, Doping, GaAs, Molecular beam epitaxy",

author = "Dance Spirkoska and {Fontcuberta i Morral}, Anna and Joseph Dufouleur and Qiushi Xie and Gerhard Abstreiter",

year = "2011",

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doi = "10.1002/pssr.201105338",

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AU - Spirkoska, Dance

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AU - Dufouleur, Joseph

AU - Xie, Qiushi

AU - Abstreiter, Gerhard

PY - 2011/9

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AB - Modulation doped AlGaAs/GaAs core-shell nanowire structures were grown by molecular beam epitaxy. A Si delta-doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. However, they show a pronounced persistent photoconductivity effect indicating activation of free carriers from the delta-doped shell to the GaAs core. The n-type character of the channel is demonstrated by applying a back-gate voltage.

KW - AlGaAs

KW - Core-shell nanowires

KW - Doping

KW - GaAs

KW - Molecular beam epitaxy

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JF - Physica Status Solidi - Rapid Research Letters

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Free standing modulation doped core-shell GaAs/AlGaAs hetero-nanowires

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