Abstract
A Si Schottky diode sampling circuit for demultiplexer was presented using flip-chip technology on alumina substrate. Very high speed Si Schottky diodes, with cutoff frequency of 750 GHz, were modeled using the Root diode model. Flip-chip interconnection was simulated using three dimensional electromagnetic simulator, HFSS. The measurements and the simulation results for the sampling circuit showed good agreement up to 40 GHz.
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1515-1518 |
| Seitenumfang | 4 |
| Fachzeitschrift | IEEE MTT-S International Microwave Symposium Digest |
| Jahrgang | 3 |
| Publikationsstatus | Veröffentlicht - 2003 |
| Veranstaltung | 2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, USA/Vereinigte Staaten Dauer: 8 Juni 2003 → 13 Juni 2003 |