Abstract
The dynamics of optically generated carriers in GaAs is investigated measuring transmission changes with ultrafast time and high spectral resolution. A novel two-color 15 fs Ti:sapphire laser system allows the observation of the femtosecond kinetics of energetic carrier distributions at excitation densities as low as 1015cm−3. For the first time, LO phonon emission of highly excited nonequilibrium electrons is directly monitored. The contribution of the hole distribution to the data and the influence of carrier-carrier scattering is studied.
Originalsprache | Englisch |
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Seiten (von - bis) | 1545-1548 |
Seitenumfang | 4 |
Fachzeitschrift | Physical Review Letters |
Jahrgang | 76 |
Ausgabenummer | 9 |
DOIs | |
Publikationsstatus | Veröffentlicht - 1996 |