Fabrication of freestanding GaN microstructures using AIN sacrificial layers

Keyphrases

• Microstructure 100%
• Sacrificial Layer 100%
• Free-standing GaN 100%
• Compressive Stress 33%
• Micro-bridge 33%
• Cantilever 33%
• GaN Layers 33%
• GaN Films 33%
• Beam Geometry 33%
• Stress Gradient 33%
• Chemical Etching 33%
• Beam Displacement 33%
• AlN Film 33%
• Plasma-assisted Molecular Beam Epitaxy 33%
• Polycrystalline AlN 33%

Engineering

• Compressive Stress 100%
• Stress Gradient 100%
• Polycrystalline 100%

Material Science

• Aluminum Nitride 100%
• Film 66%
• Wet Etching 33%
• Molecular Beam Epitaxy 33%