Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

E. I. Terukov; O. B. Gusev; O. I. Kon'Kov; Yu K. Undalov; M. Stutzmann; A. Janotta; H. Mell; J. P. Kleider

doi:10.1134/1.1521223

Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

E. I. Terukov, O. B. Gusev, O. I. Kon'Kov, Yu K. Undalov, M. Stutzmann, A. Janotta, H. Mell, J. P. Kleider

TUM Emeriti of Excellence

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Abstract

A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.

Originalsprache	Englisch
Seiten (von - bis)	1240-1243
Seitenumfang	4
Fachzeitschrift	Semiconductors
Jahrgang	36
Ausgabenummer	11
DOIs	https://doi.org/10.1134/1.1521223
Publikationsstatus	Veröffentlicht - 1 Nov. 2002

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10.1134/1.1521223

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abstract = "A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.",

author = "Terukov, {E. I.} and Gusev, {O. B.} and Kon'Kov, {O. I.} and Undalov, {Yu K.} and M. Stutzmann and A. Janotta and H. Mell and Kleider, {J. P.}",

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doi = "10.1134/1.1521223",

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T1 - Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

AU - Terukov, E. I.

AU - Gusev, O. B.

AU - Kon'Kov, O. I.

AU - Undalov, Yu K.

AU - Stutzmann, M.

AU - Janotta, A.

AU - Mell, H.

AU - Kleider, J. P.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.

AB - A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first time, which is of interest for the development of effective emitting structures with current pumping.

UR - http://www.scopus.com/inward/record.url?scp=0036859853&partnerID=8YFLogxK

U2 - 10.1134/1.1521223

DO - 10.1134/1.1521223

M3 - Article

AN - SCOPUS:0036859853

SN - 1063-7826

VL - 36

SP - 1240

EP - 1243

JO - Semiconductors

JF - Semiconductors

IS - 11

ER -

Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

Abstract

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