Enhanced band-gap luminescence in strain-symmetrized (Si)m(Ge)n superlattices

U. Menczigar, G. Abstreiter, H. Kibbel, H. Presting, E. Kasper

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

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Abstract

We report on band-gap luminescence in short period, strain-symmetrized (Si)m(Ge)n superlattices grown on relaxed, step-graded Si1-xGex alloy buffer layers. The dislocation density in the superlattices, which were grown at 500°C using Sb as a surfactant, is reduced by 2-3 orders of magnitude compared with superlattices grown on thin, partly relaxed Si1-xGex buffer layers. Due to the improved quality of the superlattices, well defined band-gap luminescence could be observed which is for a (Si)6(Ge)4 superlattice strongly enhanced compared with a Si0.6Ge0.4 alloy reference sample. The measured band-gap energies compare well with theoretical predictions. To study the influence of interdiffusion of the Si- and Ge-layers on the band-gap of the superlattices, the samples were annealed and studied with photoluminescence and Raman spectroscopy. An increasing band-gap and a decreasing luminescence efficiency was found with increasing intermixing of the layers. These experimental results are well described with an interdiffusion model of the layers in conjunction with an effective mass calculation.

OriginalspracheEnglisch
TitelMaterials Research Society Symposium Proceedings
Herausgeber (Verlag)Publ by Materials Research Society
Seiten33-44
Seitenumfang12
ISBN (Print)1558991948, 9781558991941
DOIs
PublikationsstatusVeröffentlicht - 1993
VeranstaltungProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Dauer: 12 Apr. 199314 Apr. 1993

Publikationsreihe

NameMaterials Research Society Symposium Proceedings
Band298
ISSN (Print)0272-9172

Konferenz

KonferenzProceedings of the Symposium on Silicon-Based Optoelectronic Materials
OrtSan Francisco, CA, USA
Zeitraum12/04/9314/04/93

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