ELECTROCHEMICAL INVESTIGATIONS OF ION-IMPLANTED OXIDE FILMS.

J. W. Schultze; B. Danzfuss; O. Meyer; U. Stimming

ELECTROCHEMICAL INVESTIGATIONS OF ION-IMPLANTED OXIDE FILMS.

J. W. Schultze, B. Danzfuss, O. Meyer, U. Stimming

Heinrich-Heine-University

Publikation: Beitrag in Buch/Bericht/Konferenzband › Konferenzbeitrag › Begutachtung

2 Zitate (Scopus)

Abstract

Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 v. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide.

Originalsprache	Englisch
Titel	Unknown Host Publication Title
Herausgeber (Verlag)	Elsevier Sequoia SA
Seiten	273-282
Seitenumfang	10
Auflage	2
ISBN (Print)	0444750347, 9780444750341
Publikationsstatus	Veröffentlicht - 1985
Extern publiziert	Ja

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Nummer	2
Band	69

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title = "ELECTROCHEMICAL INVESTIGATIONS OF ION-IMPLANTED OXIDE FILMS.",

abstract = "Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 v. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide.",

author = "Schultze, {J. W.} and B. Danzfuss and O. Meyer and U. Stimming",

year = "1985",

language = "English",

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publisher = "Elsevier Sequoia SA",

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T1 - ELECTROCHEMICAL INVESTIGATIONS OF ION-IMPLANTED OXIDE FILMS.

AU - Schultze, J. W.

AU - Danzfuss, B.

AU - Meyer, O.

AU - Stimming, U.

PY - 1985

Y1 - 1985

N2 - Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 v. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide.

AB - Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 v. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide.

UR - http://www.scopus.com/inward/record.url?scp=0022224675&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022224675

SN - 0444750347

SN - 9780444750341

SP - 273

EP - 282

BT - Unknown Host Publication Title

PB - Elsevier Sequoia SA

ER -

ELECTROCHEMICAL INVESTIGATIONS OF ION-IMPLANTED OXIDE FILMS.

Abstract

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