Efficient Light Emission from Hexagonal SiGe

E. M.T. Fadaly; A. Dijksta; J. R. Suckert; D. Ziss; M. A.J.V. Tilburg; C. Mao; Y. Ren; V. T.V. Lange; S. Kölling; M. A. Verheijen; D. Busse; C. Rödl; J. Furthmüller; F. Bechstedt; J. Stangl; J. J. Finley; S. Botti; J. E.M. Haverkort; E. P.A.M. Bakkers

doi:10.1109/SNW51795.2021.00024

Efficient Light Emission from Hexagonal SiGe

E. M.T. Fadaly, A. Dijksta, J. R. Suckert, D. Ziss, M. A.J.V. Tilburg, C. Mao, Y. Ren, V. T.V. Lange, S. Kölling, M. A. Verheijen, D. Busse, C. Rödl, J. Furthmüller, F. Bechstedt, J. Stangl, J. J. Finley, S. Botti, J. E.M. Haverkort, E. P.A.M. Bakkers

Publikation: Beitrag in Buch/Bericht/Konferenzband › Konferenzbeitrag › Begutachtung

Abstract

Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices Here, we show that we can create a direct band gap in Si_1-xGe_xalloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.65>x>1. Hex-Si_1-xGe_xalloys have been fabricated and efficient light emission has been observed.

Originalsprache	Englisch
Titel	2021 Silicon Nanoelectronics Workshop, SNW 2021
Herausgeber (Verlag)	Institute of Electrical and Electronics Engineers Inc.
ISBN (elektronisch)	9784863487819
DOIs	https://doi.org/10.1109/SNW51795.2021.00024
Publikationsstatus	Veröffentlicht - 2021
Veranstaltung	26th Silicon Nanoelectronics Workshop, SNW 2021 - Virtual, Online, Japan Dauer: 13 Juni 2021 → …

Publikationsreihe

Name	2021 Silicon Nanoelectronics Workshop, SNW 2021

Konferenz

Konferenz	26th Silicon Nanoelectronics Workshop, SNW 2021
Land/Gebiet	Japan
Ort	Virtual, Online
Zeitraum	13/06/21 → …

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10.1109/SNW51795.2021.00024

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Fadaly, E. M. T., Dijksta, A., Suckert, J. R., Ziss, D., Tilburg, M. A. J. V., Mao, C., Ren, Y., Lange, V. T. V., Kölling, S., Verheijen, M. A., Busse, D., Rödl, C., Furthmüller, J., Bechstedt, F., Stangl, J., Finley, J. J., Botti, S., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2021). Efficient Light Emission from Hexagonal SiGe. in 2021 Silicon Nanoelectronics Workshop, SNW 2021 (2021 Silicon Nanoelectronics Workshop, SNW 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW51795.2021.00024

@inproceedings{933195ce95ba4a7eb4cf320c7db5b4c6,

title = "Efficient Light Emission from Hexagonal SiGe",

abstract = "Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices Here, we show that we can create a direct band gap in Si1-xGexalloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.65>x>1. Hex-Si1-xGexalloys have been fabricated and efficient light emission has been observed.",

author = "Fadaly, {E. M.T.} and A. Dijksta and Suckert, {J. R.} and D. Ziss and Tilburg, {M. A.J.V.} and C. Mao and Y. Ren and Lange, {V. T.V.} and S. K{\"o}lling and Verheijen, {M. A.} and D. Busse and C. R{\"o}dl and J. Furthm{\"u}ller and F. Bechstedt and J. Stangl and Finley, {J. J.} and S. Botti and Haverkort, {J. E.M.} and Bakkers, {E. P.A.M.}",

year = "2021",

doi = "10.1109/SNW51795.2021.00024",

language = "English",

series = "2021 Silicon Nanoelectronics Workshop, SNW 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2021 Silicon Nanoelectronics Workshop, SNW 2021",

}

Fadaly, EMT, Dijksta, A, Suckert, JR, Ziss, D, Tilburg, MAJV, Mao, C, Ren, Y, Lange, VTV, Kölling, S, Verheijen, MA, Busse, D, Rödl, C, Furthmüller, J, Bechstedt, F, Stangl, J, Finley, JJ, Botti, S, Haverkort, JEM & Bakkers, EPAM 2021, Efficient Light Emission from Hexagonal SiGe. in 2021 Silicon Nanoelectronics Workshop, SNW 2021. 2021 Silicon Nanoelectronics Workshop, SNW 2021, Institute of Electrical and Electronics Engineers Inc., 26th Silicon Nanoelectronics Workshop, SNW 2021, Virtual, Online, Japan, 13/06/21. https://doi.org/10.1109/SNW51795.2021.00024

TY - GEN

T1 - Efficient Light Emission from Hexagonal SiGe

AU - Fadaly, E. M.T.

AU - Dijksta, A.

AU - Suckert, J. R.

AU - Ziss, D.

AU - Tilburg, M. A.J.V.

AU - Mao, C.

AU - Ren, Y.

AU - Lange, V. T.V.

AU - Kölling, S.

AU - Verheijen, M. A.

AU - Busse, D.

AU - Rödl, C.

AU - Furthmüller, J.

AU - Bechstedt, F.

AU - Stangl, J.

AU - Finley, J. J.

AU - Botti, S.

AU - Haverkort, J. E.M.

AU - Bakkers, E. P.A.M.

PY - 2021

Y1 - 2021

N2 - Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices Here, we show that we can create a direct band gap in Si1-xGexalloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.65>x>1. Hex-Si1-xGexalloys have been fabricated and efficient light emission has been observed.

AB - Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices Here, we show that we can create a direct band gap in Si1-xGexalloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.65>x>1. Hex-Si1-xGexalloys have been fabricated and efficient light emission has been observed.

UR - http://www.scopus.com/inward/record.url?scp=85124909091&partnerID=8YFLogxK

U2 - 10.1109/SNW51795.2021.00024

DO - 10.1109/SNW51795.2021.00024

M3 - Conference contribution

AN - SCOPUS:85124909091

T3 - 2021 Silicon Nanoelectronics Workshop, SNW 2021

BT - 2021 Silicon Nanoelectronics Workshop, SNW 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th Silicon Nanoelectronics Workshop, SNW 2021

Y2 - 13 June 2021

ER -

Efficient Light Emission from Hexagonal SiGe

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