Effect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source

E. Rauwel, F. Ducroquet, P. Rauwel, M. G. Willinger, I. Matko, N. Pinna

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

11 Zitate (Scopus)

Abstract

Titania and hafnia thin films were deposited by atomic layer deposition using metal alkoxides and carboxylic acids as oxygen source. The effect of annealing under nitrogen on the densification of the films and on the resulting electrical properties is presented. The as-deposited and annealed films demonstrate good dielectric permittivity and low leakage current densities due to their purity and amorphous character.

OriginalspracheEnglisch
Seiten (von - bis)230-235
Seitenumfang6
FachzeitschriftJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Jahrgang27
Ausgabenummer1
DOIs
PublikationsstatusVeröffentlicht - 2009
Extern publiziertJa

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