Dynamics of optically stored charges in InGaAs quantum dots

Y. Ducommun; M. Kroutvar; J. J. Finley; M. Bichler; A. Zrenner; G. Abstreiter

doi:10.1016/j.physe.2003.11.144

Dynamics of optically stored charges in InGaAs quantum dots

Y. Ducommun, M. Kroutvar, J. J. Finley, M. Bichler, A. Zrenner, G. Abstreiter

Publikation: Beitrag in Fachzeitschrift › Konferenzartikel › Begutachtung

2 Zitate (Scopus)

Abstract

We investigate a charge storage device based on InGaAs quantum dots, that utilizes optical charge generation and readout of the stored charge distribution. A detailed analysis of the temporal evolution of the charge storage spectra is presented as a function of lattice temperature. Persistent (≫25 μs) wavelength selective storage of electrons is demonstrated for temperatures up to T=90 K. Resonantly stored holes are found to thermally redistribute among the quantum dot ensemble for T≥60 K over microsecond timescales. Our results provide new insight into the dynamics of resonantly stored charge and the temperature-induced modifications of the absorption process for self-assembled quantum dots.

Originalsprache	Englisch
Seiten (von - bis)	886-891
Seitenumfang	6
Fachzeitschrift	Physica E: Low-Dimensional Systems and Nanostructures
Jahrgang	21
Ausgabenummer	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.144
Publikationsstatus	Veröffentlicht - März 2004
Veranstaltung	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Dauer: 14 Juli 2003 → 18 Juli 2003

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10.1016/j.physe.2003.11.144

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@article{b78fb98b9fd64b2ebf92877bfc768507,

title = "Dynamics of optically stored charges in InGaAs quantum dots",

abstract = "We investigate a charge storage device based on InGaAs quantum dots, that utilizes optical charge generation and readout of the stored charge distribution. A detailed analysis of the temporal evolution of the charge storage spectra is presented as a function of lattice temperature. Persistent (≫25 μs) wavelength selective storage of electrons is demonstrated for temperatures up to T=90 K. Resonantly stored holes are found to thermally redistribute among the quantum dot ensemble for T≥60 K over microsecond timescales. Our results provide new insight into the dynamics of resonantly stored charge and the temperature-induced modifications of the absorption process for self-assembled quantum dots.",

keywords = "Charge storage, Luminescence spectroscopy, Quantum dots, Thermal redistribution",

author = "Y. Ducommun and M. Kroutvar and Finley, {J. J.} and M. Bichler and A. Zrenner and G. Abstreiter",

year = "2004",

month = mar,

doi = "10.1016/j.physe.2003.11.144",

language = "English",

volume = "21",

pages = "886--891",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "2-4",

note = "Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

}

TY - JOUR

T1 - Dynamics of optically stored charges in InGaAs quantum dots

AU - Ducommun, Y.

AU - Kroutvar, M.

AU - Finley, J. J.

AU - Bichler, M.

AU - Zrenner, A.

AU - Abstreiter, G.

PY - 2004/3

Y1 - 2004/3

N2 - We investigate a charge storage device based on InGaAs quantum dots, that utilizes optical charge generation and readout of the stored charge distribution. A detailed analysis of the temporal evolution of the charge storage spectra is presented as a function of lattice temperature. Persistent (≫25 μs) wavelength selective storage of electrons is demonstrated for temperatures up to T=90 K. Resonantly stored holes are found to thermally redistribute among the quantum dot ensemble for T≥60 K over microsecond timescales. Our results provide new insight into the dynamics of resonantly stored charge and the temperature-induced modifications of the absorption process for self-assembled quantum dots.

AB - We investigate a charge storage device based on InGaAs quantum dots, that utilizes optical charge generation and readout of the stored charge distribution. A detailed analysis of the temporal evolution of the charge storage spectra is presented as a function of lattice temperature. Persistent (≫25 μs) wavelength selective storage of electrons is demonstrated for temperatures up to T=90 K. Resonantly stored holes are found to thermally redistribute among the quantum dot ensemble for T≥60 K over microsecond timescales. Our results provide new insight into the dynamics of resonantly stored charge and the temperature-induced modifications of the absorption process for self-assembled quantum dots.

KW - Charge storage

KW - Luminescence spectroscopy

KW - Quantum dots

KW - Thermal redistribution

UR - http://www.scopus.com/inward/record.url?scp=1642357891&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2003.11.144

DO - 10.1016/j.physe.2003.11.144

M3 - Conference article

AN - SCOPUS:1642357891

SN - 1386-9477

VL - 21

SP - 886

EP - 891

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

Dynamics of optically stored charges in InGaAs quantum dots

Abstract

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