Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots

C. Lingk, G. Von Plessen, J. Feldmann, K. Stock, M. Arzberger, G. Böhm, M. C. Amann, G. Abstreiter

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

29 Zitate (Scopus)


We investigate the dynamics of amplified spontaneous emission (ASE) in self-assembled InAs/ GaAs quantum dots, using pulsed optical excitation of an edge-emitting sample at room temperature. A material gain of 1.5 × 104 cm-1 is determined for 800 mn excitation with 1.5 μJ/cm2 pulses. Using photoluminescence up-conversion, we show that increases in both electron-hole pair density and photon density in the excited stripe cause a significant decrease in the decay time from 2.2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A carrier capture time of 10 ps limits the onset of the ASE process for short stripe lengths.

Seiten (von - bis)3507-3509
FachzeitschriftApplied Physics Letters
PublikationsstatusVeröffentlicht - 12 Juni 2000


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