Directed Self-assembly of Silicon Nanocubes Fabricated by Nano Imprint-Lithography

M. Speckbacher; E. Osman; J. Gibbs; M. Tornow

doi:10.1109/NANO.2018.8626349

Directed Self-assembly of Silicon Nanocubes Fabricated by Nano Imprint-Lithography

M. Speckbacher, E. Osman, J. Gibbs, M. Tornow

Professur für Molekularelektronik

Publikation: Beitrag in Buch/Bericht/Konferenzband › Konferenzbeitrag › Begutachtung

3 Zitate (Scopus)

Abstract

The fabrication, electrical characterization and self-assembly of silicon nanocubes (SiNCs) is reported. Arrays of highly doped SiNCs featuring edge lengths of 110 nm are fabricated in large yields on silicon-on-insulator substrates using nano imprint-lithography as well as wet chemical and dry etching techniques. Interdigitated electrode arrays serve as a platform for the electrical characterization of single SiNCs. Self-assembly of SiNC agglomerates in solution is realized by cube surface functionalization with self-assembled monolayers of trimethoxysilane molecules. Complementary terminal groups form covalent bonds between adjacent particles via Cu(I)-catalyzed alkyne-azide cycloaddition towards bottom-up, directed assembly of functional electrical building blocks.

Originalsprache	Englisch
Titel	18th International Conference on Nanotechnology, NANO 2018
Herausgeber (Verlag)	IEEE Computer Society
ISBN (elektronisch)	9781538653364
DOIs	https://doi.org/10.1109/NANO.2018.8626349
Publikationsstatus	Veröffentlicht - 2 Juli 2018
Veranstaltung	18th International Conference on Nanotechnology, NANO 2018 - Cork, Irland Dauer: 23 Juli 2018 → 26 Juli 2018

Publikationsreihe

Name	Proceedings of the IEEE Conference on Nanotechnology
Band	2018-July
ISSN (Print)	1944-9399
ISSN (elektronisch)	1944-9380

Konferenz

Konferenz	18th International Conference on Nanotechnology, NANO 2018
Land/Gebiet	Irland
Ort	Cork
Zeitraum	23/07/18 → 26/07/18

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10.1109/NANO.2018.8626349

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title = "Directed Self-assembly of Silicon Nanocubes Fabricated by Nano Imprint-Lithography",

abstract = "The fabrication, electrical characterization and self-assembly of silicon nanocubes (SiNCs) is reported. Arrays of highly doped SiNCs featuring edge lengths of 110 nm are fabricated in large yields on silicon-on-insulator substrates using nano imprint-lithography as well as wet chemical and dry etching techniques. Interdigitated electrode arrays serve as a platform for the electrical characterization of single SiNCs. Self-assembly of SiNC agglomerates in solution is realized by cube surface functionalization with self-assembled monolayers of trimethoxysilane molecules. Complementary terminal groups form covalent bonds between adjacent particles via Cu(I)-catalyzed alkyne-azide cycloaddition towards bottom-up, directed assembly of functional electrical building blocks.",

author = "M. Speckbacher and E. Osman and J. Gibbs and M. Tornow",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 18th International Conference on Nanotechnology, NANO 2018 ; Conference date: 23-07-2018 Through 26-07-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/NANO.2018.8626349",

language = "English",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

booktitle = "18th International Conference on Nanotechnology, NANO 2018",

}

Speckbacher, M, Osman, E, Gibbs, J & Tornow, M 2018, Directed Self-assembly of Silicon Nanocubes Fabricated by Nano Imprint-Lithography. in 18th International Conference on Nanotechnology, NANO 2018., 8626349, Proceedings of the IEEE Conference on Nanotechnology, Bd. 2018-July, IEEE Computer Society, 18th International Conference on Nanotechnology, NANO 2018, Cork, Irland, 23/07/18. https://doi.org/10.1109/NANO.2018.8626349

Directed Self-assembly of Silicon Nanocubes Fabricated by Nano Imprint-Lithography. / Speckbacher, M.; Osman, E.; Gibbs, J. et al.
18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2018. 8626349 (Proceedings of the IEEE Conference on Nanotechnology; Band 2018-July).

Publikation: Beitrag in Buch/Bericht/Konferenzband › Konferenzbeitrag › Begutachtung

TY - GEN

T1 - Directed Self-assembly of Silicon Nanocubes Fabricated by Nano Imprint-Lithography

AU - Speckbacher, M.

AU - Osman, E.

AU - Gibbs, J.

AU - Tornow, M.

PY - 2018/7/2

Y1 - 2018/7/2

N2 - The fabrication, electrical characterization and self-assembly of silicon nanocubes (SiNCs) is reported. Arrays of highly doped SiNCs featuring edge lengths of 110 nm are fabricated in large yields on silicon-on-insulator substrates using nano imprint-lithography as well as wet chemical and dry etching techniques. Interdigitated electrode arrays serve as a platform for the electrical characterization of single SiNCs. Self-assembly of SiNC agglomerates in solution is realized by cube surface functionalization with self-assembled monolayers of trimethoxysilane molecules. Complementary terminal groups form covalent bonds between adjacent particles via Cu(I)-catalyzed alkyne-azide cycloaddition towards bottom-up, directed assembly of functional electrical building blocks.

AB - The fabrication, electrical characterization and self-assembly of silicon nanocubes (SiNCs) is reported. Arrays of highly doped SiNCs featuring edge lengths of 110 nm are fabricated in large yields on silicon-on-insulator substrates using nano imprint-lithography as well as wet chemical and dry etching techniques. Interdigitated electrode arrays serve as a platform for the electrical characterization of single SiNCs. Self-assembly of SiNC agglomerates in solution is realized by cube surface functionalization with self-assembled monolayers of trimethoxysilane molecules. Complementary terminal groups form covalent bonds between adjacent particles via Cu(I)-catalyzed alkyne-azide cycloaddition towards bottom-up, directed assembly of functional electrical building blocks.

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U2 - 10.1109/NANO.2018.8626349

DO - 10.1109/NANO.2018.8626349

M3 - Conference contribution

AN - SCOPUS:85062267877

T3 - Proceedings of the IEEE Conference on Nanotechnology

BT - 18th International Conference on Nanotechnology, NANO 2018

PB - IEEE Computer Society

T2 - 18th International Conference on Nanotechnology, NANO 2018

Y2 - 23 July 2018 through 26 July 2018

ER -

Directed Self-assembly of Silicon Nanocubes Fabricated by Nano Imprint-Lithography

Abstract

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