Direct broadband gaussian modulation of semiconductor laser diodes and its application to electrooptic-sampling

W. Thomann; P. Russer

doi:10.1117/12.175251

Direct broadband gaussian modulation of semiconductor laser diodes and its application to electrooptic-sampling

W. Thomann, P. Russer

Technische Universität München

Publikation: Beitrag in Fachzeitschrift › Konferenzartikel › Begutachtung

Abstract

An ultra-broadband hybrid integrated pulse shaping circuit for the direct and efficient modulation of semiconductor injection lasers has been developed. The circuitry is optimized for the use in an electrooptic sampling setup that utilizes a 1.3 μm wavelength Fabry-Perot laser diode. The realization of arbitrary repetition rates allows the operation of the measurement setup similar to a conventional sampling oscilloscope with a trigger input. The generation of the electrical pulses and the obtained optical pulses as well as the simulation of the large signal modulation is discussed.

Originalsprache	Englisch
Seiten (von - bis)	119-126
Seitenumfang	8
Fachzeitschrift	Proceedings of SPIE - The International Society for Optical Engineering
Jahrgang	2149
DOIs	https://doi.org/10.1117/12.175251
Publikationsstatus	Veröffentlicht - 2 Mai 1994
Veranstaltung	Technologies for Optical Fiber Communications 1994 - Los Angeles, USA/Vereinigte Staaten Dauer: 23 Jan. 1994 → 29 Jan. 1994

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abstract = "An ultra-broadband hybrid integrated pulse shaping circuit for the direct and efficient modulation of semiconductor injection lasers has been developed. The circuitry is optimized for the use in an electrooptic sampling setup that utilizes a 1.3 μm wavelength Fabry-Perot laser diode. The realization of arbitrary repetition rates allows the operation of the measurement setup similar to a conventional sampling oscilloscope with a trigger input. The generation of the electrical pulses and the obtained optical pulses as well as the simulation of the large signal modulation is discussed.",

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AB - An ultra-broadband hybrid integrated pulse shaping circuit for the direct and efficient modulation of semiconductor injection lasers has been developed. The circuitry is optimized for the use in an electrooptic sampling setup that utilizes a 1.3 μm wavelength Fabry-Perot laser diode. The realization of arbitrary repetition rates allows the operation of the measurement setup similar to a conventional sampling oscilloscope with a trigger input. The generation of the electrical pulses and the obtained optical pulses as well as the simulation of the large signal modulation is discussed.

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Direct broadband gaussian modulation of semiconductor laser diodes and its application to electrooptic-sampling

Abstract

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