Design of low-voltage bandgap reference circuits in multi-gate CMOS technologies

M. Fulde, M. Wirnshofer, G. Knoblinger, D. Schmitt-Landsiedel

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

3 Zitate (Scopus)

Abstract

This paper presents design considerations and measurement results for low voltage bandgap reference circuits in a recent multi-gate CMOS technology. Gated p-i-n diodes are used as basic elements, a corresponding model covering temperature dependence is derived. The impact of non-idealities and process variations on circuit performance is analyzed, design guidelines are derived. Low gds of current source transistors, low Op-Amp offset and sufficient gain are identified as main parameters for optimization of multi-gate bandgap performance. The feasibility of low voltage bandgap references in multi-gate technology is proven by measurement results. Bandgap references with PSRR of 40dB and TC of 56μV/°C are shown.

OriginalspracheEnglisch
Titel2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Seiten2537-2540
Seitenumfang4
DOIs
PublikationsstatusVeröffentlicht - 2009
Veranstaltung2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 - Taipei, Taiwan
Dauer: 24 Mai 200927 Mai 2009

Publikationsreihe

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Konferenz

Konferenz2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Land/GebietTaiwan
OrtTaipei
Zeitraum24/05/0927/05/09

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