Confined plasmons in shallow etched quantum wires

R. Strenz; V. Rosskopf; F. Hirler; G. Abstreiter; G. Bohm; G. Trankle; G. Weimann

doi:10.1088/0268-1242/9/4/011

Confined plasmons in shallow etched quantum wires

R. Strenz, V. Rosskopf, F. Hirler, G. Abstreiter, G. Bohm, G. Trankle, G. Weimann

TUM Emeriti of Excellence

Walter Schottky Institut

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

20 Zitate (Scopus)

Abstract

Resonant Raman scattering and FIR transmission spectroscopy is used to detect confined plasmons in shallow etched GaAs/AlGaAs single quantum well wires. Different samples with varying period lengths and wire widths are investigated. The lateral potential modulation can be estimated by analysing spatially direct and indirect luminescence. We find deviations from the simple model that uses a 2D plasmon dispersion relation and wavevectors corresponding to integral numbers of half wavelengths in the confined region.

Originalsprache	Englisch
Aufsatznummer	011
Seiten (von - bis)	399-403
Seitenumfang	5
Fachzeitschrift	Semiconductor Science and Technology
Jahrgang	9
Ausgabenummer	4
DOIs	https://doi.org/10.1088/0268-1242/9/4/011
Publikationsstatus	Veröffentlicht - 1994

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abstract = "Resonant Raman scattering and FIR transmission spectroscopy is used to detect confined plasmons in shallow etched GaAs/AlGaAs single quantum well wires. Different samples with varying period lengths and wire widths are investigated. The lateral potential modulation can be estimated by analysing spatially direct and indirect luminescence. We find deviations from the simple model that uses a 2D plasmon dispersion relation and wavevectors corresponding to integral numbers of half wavelengths in the confined region.",

author = "R. Strenz and V. Rosskopf and F. Hirler and G. Abstreiter and G. Bohm and G. Trankle and G. Weimann",

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AU - Strenz, R.

AU - Rosskopf, V.

AU - Hirler, F.

AU - Abstreiter, G.

AU - Bohm, G.

AU - Trankle, G.

AU - Weimann, G.

PY - 1994

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AB - Resonant Raman scattering and FIR transmission spectroscopy is used to detect confined plasmons in shallow etched GaAs/AlGaAs single quantum well wires. Different samples with varying period lengths and wire widths are investigated. The lateral potential modulation can be estimated by analysing spatially direct and indirect luminescence. We find deviations from the simple model that uses a 2D plasmon dispersion relation and wavevectors corresponding to integral numbers of half wavelengths in the confined region.

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Confined plasmons in shallow etched quantum wires

Abstract

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