TY - GEN
T1 - Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics
AU - Huang, Yaren
AU - Wachutka, Gerhard
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/10/20
Y1 - 2016/10/20
N2 - The forward characteristics of MPS diodes is composed of two branches: the first one is determined by unipolar conductivity originating from the Schottky contact, while the second one arises from hole injection by the Ohmic contact. A high ratio Ws/Wo of the Schottky contact area Ws to the Ohmic contact area Wo results in high unipolar conductivity and, thus, less heat dissipation under normal operation condition. But the bipolar injection efficiency is too law to support a high surge current capability. We attempt to give some guidelines how these two complementary functional principles can be combined with a view to finding optimum trade-offs for given customer-defined specifications, such as blocking voltage, nominal forward current, and surge current capability. In this work, several novel contact topographies are investigated using comprehensive 2D and 3D computer simulation to analyze consecutive improvements of the trade-off between regular (nominal) operation and surge mode, These TCAD simulations provide a physical understanding of the inner electronic device behavior of each topography considered and lead us eventually to novel concepts.
AB - The forward characteristics of MPS diodes is composed of two branches: the first one is determined by unipolar conductivity originating from the Schottky contact, while the second one arises from hole injection by the Ohmic contact. A high ratio Ws/Wo of the Schottky contact area Ws to the Ohmic contact area Wo results in high unipolar conductivity and, thus, less heat dissipation under normal operation condition. But the bipolar injection efficiency is too law to support a high surge current capability. We attempt to give some guidelines how these two complementary functional principles can be combined with a view to finding optimum trade-offs for given customer-defined specifications, such as blocking voltage, nominal forward current, and surge current capability. In this work, several novel contact topographies are investigated using comprehensive 2D and 3D computer simulation to analyze consecutive improvements of the trade-off between regular (nominal) operation and surge mode, These TCAD simulations provide a physical understanding of the inner electronic device behavior of each topography considered and lead us eventually to novel concepts.
UR - https://www.scopus.com/pages/publications/85015680836
U2 - 10.1109/SISPAD.2016.7605161
DO - 10.1109/SISPAD.2016.7605161
M3 - Conference contribution
AN - SCOPUS:85015680836
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 117
EP - 120
BT - 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
A2 - Pichler, Peter
A2 - Bar, Eberhard
A2 - Lorenz, Jurgen
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
Y2 - 6 September 2016 through 8 September 2016
ER -