TY - JOUR
T1 - Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)
AU - Weis, M.
AU - Schmitt-Landsiedel, D.
PY - 2010
Y1 - 2010
N2 - The recently introduced Vertical Slit Field Effect Transistor allows for adjusting its threshold voltage through independent controllable gates. This feature can be applied to a broad range of circuits. In this paper two examples are presented. First, a ring oscillator with a wide frequency tuning range and second, a Schmitt trigger with a controllable hysteresis.
AB - The recently introduced Vertical Slit Field Effect Transistor allows for adjusting its threshold voltage through independent controllable gates. This feature can be applied to a broad range of circuits. In this paper two examples are presented. First, a ring oscillator with a wide frequency tuning range and second, a Schmitt trigger with a controllable hysteresis.
UR - http://www.scopus.com/inward/record.url?scp=78649259667&partnerID=8YFLogxK
U2 - 10.5194/ars-8-275-2010
DO - 10.5194/ars-8-275-2010
M3 - Article
AN - SCOPUS:78649259667
SN - 1684-9965
VL - 8
SP - 275
EP - 278
JO - Advances in Radio Science
JF - Advances in Radio Science
ER -