TY - GEN
T1 - Characterizing magnetic field-coupled computing devices by the Extraordinary Hall-effect
AU - Becherer, M.
AU - Kiermaier, J.
AU - Csaba, G.
AU - Rezgani, J.
AU - Yilmaz, C.
AU - Osswald, P.
AU - Lugli, P.
AU - Schmitt-Landsiede, D.
PY - 2009
Y1 - 2009
N2 - A submicron sized Extraordinary Hall-effect (EHE) sensor for read-out of field-coupled computing devices is presented. The applied sensing structure is suitable to electrically probe the output states of field-coupled magnetic logic gates. Furthermore it reveals details on the magnetic properties of submicron-scale single-domain dots. A 'split-current' architecture is chosen, where Hall-sensing takes place in a single lateral direction, in order to keep field-coupling to adjacent nanomagnets undisturbed. By focused ion beam (FIB) irradiation, the magnetic properties of Co/Pt muItilayers are tailored to define both the switching field and the geometry of nanomagnetic dots. From angular measurements we conclude, that the reversal mechanism of the FIB patterned magnetic dots remains to be domain-wall driven. The sensor is a main component needed for integration of nanomagnetic computing units embedded into microelectronic systems.
AB - A submicron sized Extraordinary Hall-effect (EHE) sensor for read-out of field-coupled computing devices is presented. The applied sensing structure is suitable to electrically probe the output states of field-coupled magnetic logic gates. Furthermore it reveals details on the magnetic properties of submicron-scale single-domain dots. A 'split-current' architecture is chosen, where Hall-sensing takes place in a single lateral direction, in order to keep field-coupling to adjacent nanomagnets undisturbed. By focused ion beam (FIB) irradiation, the magnetic properties of Co/Pt muItilayers are tailored to define both the switching field and the geometry of nanomagnetic dots. From angular measurements we conclude, that the reversal mechanism of the FIB patterned magnetic dots remains to be domain-wall driven. The sensor is a main component needed for integration of nanomagnetic computing units embedded into microelectronic systems.
UR - http://www.scopus.com/inward/record.url?scp=72949088254&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2009.5331551
DO - 10.1109/ESSDERC.2009.5331551
M3 - Conference contribution
AN - SCOPUS:72949088254
SN - 9781424443536
T3 - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
SP - 105
EP - 108
BT - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
T2 - 39th European Solid-State Device Research Conference, ESSDERC 2009
Y2 - 14 September 2009 through 18 September 2009
ER -