Abstract
A broadband single pole double throw (SPDT) switch has been developed for use in the range of 0 to 30 GHz. The switch consists of a cascade of a MEMS ohmic series and a capacitive shunt switch with floating electrode in each branch. It is manufactured on high-resistive silicon using surface micro-machining technology. The SPDT switch provides an insertion loss better than -0.6 dB, return loss smaller than -20dB, and isolation better than -40 dB in nearly the whole band. A switching voltage around 50 V is needed. The switch is used as a building block for more complex switching networks. The fabrication process is described and the measured RF-performances are reported and discussed. A failure analysis exhibits a lifetime up to 109 actuations.
| Originalsprache | Englisch |
|---|---|
| Titel | Proceedings of the 36th European Microwave Conference, EuMC 2006 |
| Herausgeber (Verlag) | IEEE Computer Society |
| Seiten | 1727-1730 |
| Seitenumfang | 4 |
| ISBN (Print) | 2960055160, 9782960055160 |
| DOIs | |
| Publikationsstatus | Veröffentlicht - 2006 |
| Veranstaltung | 36th European Microwave Conference, EuMC 2006 - Manchester, Großbritannien/Vereinigtes Königreich Dauer: 10 Sept. 2006 → 12 Sept. 2006 |
Publikationsreihe
| Name | Proceedings of the 36th European Microwave Conference, EuMC 2006 |
|---|
Konferenz
| Konferenz | 36th European Microwave Conference, EuMC 2006 |
|---|---|
| Land/Gebiet | Großbritannien/Vereinigtes Königreich |
| Ort | Manchester |
| Zeitraum | 10/09/06 → 12/09/06 |
UN SDGs
Dieser Output leistet einen Beitrag zu folgendem(n) Ziel(en) für nachhaltige Entwicklung
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SDG 9 – Industrie, Innovation und Infrastruktur
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